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Applied Optics

Applied Optics


  • Vol. 37, Iss. 22 — Aug. 1, 1998
  • pp: 5262–5270

Optical characterization of dielectric and semiconductor thin films by use of transmission data

Jorge I. Cisneros  »View Author Affiliations

Applied Optics, Vol. 37, Issue 22, pp. 5262-5270 (1998)

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A method to calculate the optical functions n(λ) and k(λ) by use of the transmission spectrum of a dielectric or semiconducting thin film measured at normal incidence is described. The spectrum should include the low-absorption region and the absorption edge to yield the relevant optical characteristics of the material. The formulas are derived from electromagnetic theory with no simplifying assumptions. Transparent films are considered as a particular case for which a simple method of calculation is proposed. In the general case of absorbing films the method takes advantage of some properties of the transmittance T(λ) to permit the parameters in the two regions mentioned above to be calculated separately. The interference fringes and the optical path at the extrema of T(λ) are exploited for determining with precision the refractive index and the film thickness. The absorption coefficient is computed at the absorption edge by an efficient iterative method. At the transition zone between the interference region and the absorption edge artifacts in the absorption curve are avoided. A small amount of absorption of the substrate is allowed for in the theory by means of a factor determined from an independent measurement, thus improving the quality of the results. Application of the method to a transmission spectrum of an a:Si x N1-x :H film is illustrated in detail. Refractive index, dispersion parameters, film thickness, absorption coefficient, and optical gap are given with the help of tables and graphs.

© 1998 Optical Society of America

OCIS Codes
(160.2750) Materials : Glass and other amorphous materials
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(310.6860) Thin films : Thin films, optical properties

Original Manuscript: August 7, 1997
Revised Manuscript: March 25, 1998
Published: August 1, 1998

Jorge I. Cisneros, "Optical characterization of dielectric and semiconductor thin films by use of transmission data," Appl. Opt. 37, 5262-5270 (1998)

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  1. O. S. Heavens, Optical Properties of Thin Films (Butterworth, London, 1969).
  2. P. O. Nilsson, “Determination of optical constants from intensity measurements at normal incidence,” Appl. Opt. 7, 435–442 (1968). [CrossRef] [PubMed]
  3. F. Abelès, M. L. Thèye, “Méthode de calcul des constantes optiques des couches minces absorbantes à partir des mesures de réflexion et de transmission,” Surf. Sci. 5, 325–331 (1966). [CrossRef]
  4. J. M. Bennet, M. J. Booty, “Computational method for determining n and k for a thin film from the measured reflectance, transmittance, and film thickness,” Appl. Opt. 5, 41–43 (1966). [CrossRef]
  5. J. H. Wohlgemuth, D. E. Brodie, “A method for calculating the index of refraction of thin films,” Can. J. Phys. 53, 1737–1742 (1975). [CrossRef]
  6. G. Galibert, K. Konan, R. El Grandi, J. Calas, J. L. Martin, “Accurate determination of the optical constants of absorbing thin films deposited on thick semitransparent substrates,” Mater. Sci. Eng. B 5, 37–42 (1989). [CrossRef]
  7. J. I. Cisneros, G. B. Rego, M. Tomiyama, S. Bilac, J. M. Gonçalves, A. E. Rodriguez, Z. P. Arguello, “A method for the determination of the complex refractive index of non metallic thin films using photometric measurements at normal incidence,” Thin Solid Films 100, 155–167 (1983). [CrossRef]
  8. R. Swanepoel, “Determination of the thickness and optical constants of amorphous silicon,” J. Phys. E 16, 1214–1222 (1983). [CrossRef]
  9. S. F. Durrant, S. G. Castro, J. I. Cisneros, N. C. da Cruz, M. A. Bica de Moraes, “Amorphous oxygen-containing hydrogenated carbon films formed by plasma-enhanced chemical vapor deposition,” J. Vac. Sci. Technol. A 14, 1–7 (1996). [CrossRef]
  10. M. M. Guraya, H. Ascolani, G. Zampieri, J. I. Cisneros, J. H. Dias da Silva, M. P. Cantão, “Bond densities and electronic structure of amorphous SiNx:H,” Phys. Rev. B 42, 5677–5684 (1990). [CrossRef]
  11. M. M. Guraya, H. Ascolani, G. Zampieri, J. H. Dias da Silva, M. P. Cantão, J. I. Cisneros, “Electronic structure of amorphous Si–N compounds,” Phys. Rev. B 49, 13446–13451 (1994). [CrossRef]
  12. J. H. Dias da Silva, J. I. Cisneros, M. M. Guraya, G. Zampieri, “Effects of deviation from stoichiometry and thermal annealing on amorphous gallium antimonide films,” Phys. Rev. B. 51, 6272–6279 (1995). [CrossRef]
  13. H. Dias da Silva, J. I. Cisneros, L. P. Cardoso, “Crystallization process and chemical disorder in flash evaporated amorphous gallium antimonide films,” Mater. Res. Soc. Symp. Proc. 321, 645–650 (1994). [CrossRef]
  14. F. Alvarez, I. Chambouleyron, C. Constantino, J. I. Cisneros, “Doping effects in off-stoichiometric glow discharge amorphous silicon nitride,” Appl. Phys. Lett. 44, 116–118 (1984). [CrossRef]
  15. I. Chambouleyron, F. Marques, J. I. Cisneros, F. Alvarez, S. Moehlecke, W. Losch, I. Pereyra, “Optical properties of non-stoichiometric germanium nitride compounds (a-GeNx),” J. Non-Crystal. Solids 77 & 78, 1309–1312 (1985). [CrossRef]
  16. J. M. Berger, C. Ance, F. de Chelle, J. P. Ferraton, A. Donnadieu, J. I. Cisneros, J. H. Dias da Silva, “Temperature effects on the optical properties of amorphous hydrogenated silicon nitrogen alloys prepared by rf sputtering,” J. Non-Crystal. Solids 94, 353–364 (1987). [CrossRef]
  17. J. Torres, J. I. Cisneros, G. Gordillo, F. Alvarez, “A simple method to determine the optical constants and thicknesses of ZnxCd1-xS thin films,” Thin Solid Films 289, 238–241 (1996). [CrossRef]
  18. M. Born, E. Wolf, Principles of Optics (Pergamon, London, 1975).
  19. Z. Knittl, Optics of Thin Films (Wiley, New York, 1971), Chap. 11.
  20. S. H. Wemple, M. Didomenico, “Behavior of the electronic dielectric constant in covalent and ionic materials,” Phys. Rev. B 3, 1338–1351 (1971). [CrossRef]
  21. J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1971), Chap. 3.
  22. G. D. Cody, “The optical absorption edge of a-Si:H,” in Hydrogenated Amorphous Silicon, J. I. Pankove, ed., Vol. 21B of Semiconductors and Semimetals Series (Academic, Orlando, Fla., 1984), Chap. 2.
  23. J. Tauc, “Optical properties and electronic structure of amorphous semiconductors,” in Optical Properties of Solids, S. Nudelman, S. Mitra, eds. (Plenum, New York, 1969), Chap. 5. [CrossRef]

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