OSA's Digital Library

Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 37, Iss. 22 — Aug. 1, 1998
  • pp: 5262–5270

Optical characterization of dielectric and semiconductor thin films by use of transmission data

Jorge I. Cisneros  »View Author Affiliations


Applied Optics, Vol. 37, Issue 22, pp. 5262-5270 (1998)
http://dx.doi.org/10.1364/AO.37.005262


View Full Text Article

Enhanced HTML    Acrobat PDF (128 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

A method to calculate the optical functions n(λ) and k(λ) by use of the transmission spectrum of a dielectric or semiconducting thin film measured at normal incidence is described. The spectrum should include the low-absorption region and the absorption edge to yield the relevant optical characteristics of the material. The formulas are derived from electromagnetic theory with no simplifying assumptions. Transparent films are considered as a particular case for which a simple method of calculation is proposed. In the general case of absorbing films the method takes advantage of some properties of the transmittance T(λ) to permit the parameters in the two regions mentioned above to be calculated separately. The interference fringes and the optical path at the extrema of T(λ) are exploited for determining with precision the refractive index and the film thickness. The absorption coefficient is computed at the absorption edge by an efficient iterative method. At the transition zone between the interference region and the absorption edge artifacts in the absorption curve are avoided. A small amount of absorption of the substrate is allowed for in the theory by means of a factor determined from an independent measurement, thus improving the quality of the results. Application of the method to a transmission spectrum of an a:Si x N1-x :H film is illustrated in detail. Refractive index, dispersion parameters, film thickness, absorption coefficient, and optical gap are given with the help of tables and graphs.

© 1998 Optical Society of America

OCIS Codes
(160.2750) Materials : Glass and other amorphous materials
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(310.6860) Thin films : Thin films, optical properties

History
Original Manuscript: August 7, 1997
Revised Manuscript: March 25, 1998
Published: August 1, 1998

Citation
Jorge I. Cisneros, "Optical characterization of dielectric and semiconductor thin films by use of transmission data," Appl. Opt. 37, 5262-5270 (1998)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-37-22-5262

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Log in to access OSA Member Subscription

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Log in to access OSA Member Subscription

You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Log in to access OSA Member Subscription

You do not have subscription access to this journal. Article level metrics are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Log in to access OSA Member Subscription

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited