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Applied Optics

Applied Optics


  • Vol. 37, Iss. 34 — Dec. 1, 1998
  • pp: 8147–8146

Activation Energy for Dc-drift in X-cut LiNbO3 Optical Intensity Modulators

Naoki Mitsugi, Kazumasa Kiuchi, and Hirotoshi Nagata  »View Author Affiliations

Applied Optics, Vol. 37, Issue 34, pp. 8147-8146 (1998)

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Existence of a wafer axial dependency in the activation energy (Ea) for the dc-drift of LiNbO3 modulators has been experimentally found. The Ea for the x-cut modulators is derived to be 0.2~0.5 eV, and 1 eV for the z-cut ones.

© 1998 Optical Society of America

Naoki Mitsugi, Kazumasa Kiuchi, and Hirotoshi Nagata, "Activation Energy for Dc-drift in X-cut LiNbO3 Optical Intensity Modulators," Appl. Opt. 37, 8147-8146 (1998)

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