A precision spectrometer was used to measure the spectral reflectance of a silicon photodiode over the wavelength range from 250 to 850 nm. The results were compared with the corresponding values predicted by a model based on thin-film Fresnel formulas and the known refractive indices of silicon and silicon dioxide. The good agreement at the level of 2 × 10<sup>−3</sup> in the visible wavelength range verifies that the reflection model can be used for accurate extrapolation of the spectral reflectance and responsivity of silicon photodiode devices. In addition, characterization of the photodiode reflectance in the ultraviolet region improves the accuracy of the spectral irradiance measurements when filter radiometers based on trap detectors are used.
© 1998 Optical Society of America
Atte Haapalinna, Petri Kärhä, and Erkki Ikonen, "Spectral Reflectance of Silicon Photodiodes," Appl. Opt. 37, 729-732 (1998)