The optical properties and the surface morphologies of single-ion-beam sputtering (SIBS) and dual-ion-beam sputtering (DIBS) depositions of titanium oxide films are investigated and compared. In the DIBS process, the ion-assisted deposition by the voltage of a low ion beam ranged from 50 to 300 V at a 0% and 44% oxygen percentage. Cosputtering with materials of Si, SiO2 (fused silica), and Al is also utilized in SIBS to improve amorphous-structure film. For the low-absorption and surface-roughness film, the optimum deposition condition of DIBS and postdeposition baking temperature for SIBS and DIBS are essential to the process.
© 1998 Optical Society of America
Original Manuscript: June 2, 1997
Revised Manuscript: October 17, 1997
Published: March 1, 1998
Jin-Cherng Hsu and Cheng-Chung Lee, "Single- and dual-ion-beam sputter deposition of titanium oxide films," Appl. Opt. 37, 1171-1176 (1998)