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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 38, Iss. 10 — Apr. 1, 1999
  • pp: 1910–1919

Transient behavior of infrared photoconductors: application of a numerical model

Nancy M. Haegel, Jose C. Simoes, A. Michael White, and Jeffrey W. Beeman  »View Author Affiliations


Applied Optics, Vol. 38, Issue 10, pp. 1910-1919 (1999)
http://dx.doi.org/10.1364/AO.38.001910


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Abstract

A numerical model for the transient response of extrinsic photoconductors is applied to the behavior of Ge:Ga and GaAs:Te detectors. Photoconductors display a two-component response to changes in illumination. The characteristic time and magnitude for the slow component have been studied as a function of background flux, applied field, temperature, device length, and signal size. For large-signal applications, the background flux affects the transient response even when the signal is orders of magnitude greater than the background. Experimental results are presented to support key predictions of the modeling. Because the ratio of fast to slow components is independent of both background and signal size, we propose the operation of detectors in such a way that final signal levels are derived from the fast component.

© 1999 Optical Society of America

OCIS Codes
(040.3060) Detectors : Infrared
(040.5150) Detectors : Photoconductivity
(160.6000) Materials : Semiconductor materials
(350.1270) Other areas of optics : Astronomy and astrophysics

History
Original Manuscript: August 25, 1998
Revised Manuscript: December 11, 1998
Published: April 1, 1999

Citation
Nancy M. Haegel, Jose C. Simoes, A. Michael White, and Jeffrey W. Beeman, "Transient behavior of infrared photoconductors: application of a numerical model," Appl. Opt. 38, 1910-1919 (1999)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-38-10-1910

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