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Applied Optics

Applied Optics


  • Vol. 38, Iss. 10 — Apr. 1, 1999
  • pp: 1910–1919

Transient behavior of infrared photoconductors: application of a numerical model

Nancy M. Haegel, Jose C. Simoes, A. Michael White, and Jeffrey W. Beeman  »View Author Affiliations

Applied Optics, Vol. 38, Issue 10, pp. 1910-1919 (1999)

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A numerical model for the transient response of extrinsic photoconductors is applied to the behavior of Ge:Ga and GaAs:Te detectors. Photoconductors display a two-component response to changes in illumination. The characteristic time and magnitude for the slow component have been studied as a function of background flux, applied field, temperature, device length, and signal size. For large-signal applications, the background flux affects the transient response even when the signal is orders of magnitude greater than the background. Experimental results are presented to support key predictions of the modeling. Because the ratio of fast to slow components is independent of both background and signal size, we propose the operation of detectors in such a way that final signal levels are derived from the fast component.

© 1999 Optical Society of America

OCIS Codes
(040.3060) Detectors : Infrared
(040.5150) Detectors : Photoconductivity
(160.6000) Materials : Semiconductor materials
(350.1270) Other areas of optics : Astronomy and astrophysics

Original Manuscript: August 25, 1998
Revised Manuscript: December 11, 1998
Published: April 1, 1999

Nancy M. Haegel, Jose C. Simoes, A. Michael White, and Jeffrey W. Beeman, "Transient behavior of infrared photoconductors: application of a numerical model," Appl. Opt. 38, 1910-1919 (1999)

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  1. R. L. Williams, “Relaxation phenomena in high-resistivity Ge:Hg,” J. Appl. Phys. 38, 4802–4806 (1967). [CrossRef]
  2. R. L. Williams, “Response characteristics of extrinsic photoconductors,” J. Appl. Phys. 40, 184–192 (1969). [CrossRef]
  3. A. Fenner Milton and M. M. Blouke, “Sweepout and dielectric relaxation in compensated extrinsic photoconductors,” Phys. Rev. B 3, 4312–4330 (1971). [CrossRef]
  4. P. R. Bratt, “Impurity germanium and silicon infrared detectors,” in Semiconductors and Semimetals, R. K. Willardson, A. C. Beer, eds. (Academic, New York, 1977), Vol. 12, pp. 39–142. [CrossRef]
  5. S. E. Church, M. C. Price, N. M. Haegel, M. J. Griffin, P. A. R. Ade, “Transient response in doped germanium photoconductors under very low background operation,” Appl. Opt. 35, 1597–1604 (1996). [CrossRef] [PubMed]
  6. R. M. Westervelt, S. W. Teitsworth, “Nonlinear transient response of extrinsic Ge far-infrared photoconductors,” J. Appl. Phys. 57, 5457–5469 (1985). [CrossRef]
  7. B. I. Fouks, “Injection properties of contacts to high-resistivity semiconductors,” Sov. Phys. Semicond. 15, 974–986 (1981). [Fix. Tekh. Poluprov. 15, 1679–1690 (1981)].
  8. B. I. Fouks, “Non-stationary behavior of low background photon detectors,” in Proceedings of the European Space Agency Symposium on Photon Detectors for Space Instrumentation (European Space Agency, Noordwijk, 1993) SP-356, pp. 167–174, and references therein.
  9. B. I. Fouks, “Theory of photoresponse of low-background IR detectors,” in Infrared Spaceborne Remote Sensing V, M. S. Scholl, B. Andresen, eds., Proc. SPIE3122, 441–452 (1997). [CrossRef]
  10. A. Moneti, “Infrared Space Observatory (ISO) detector workshop: viewgraphs of the presentations,” presented at the ISO Detector Workshop, Villafranca del Castillo, Spain, 14–16 January 1998.
  11. N. M. Haegel, A. M. White, “Modeling of near-contact field and carrier distributions in extrinsic photoconductors,” Infrared Phys. 29, 915–923 (1989). [CrossRef]
  12. N. M. Haegel, C. A. Latasa, A. M. White, “Transient response of infrared photoconductors: the roles of contacts and space charge,” Appl. Phys. A 56, 15–21 (1993). [CrossRef]
  13. N. M. Haegel, C. R. Brennan, A. M. White, “Transport in extrinsic photoconductors: a comprehensive model for transient response,” J. Appl. Phys. 80, 1510–1514 (1996). [CrossRef]
  14. N. M. Haegel, C. Newton, J. C. Simoes, A. M. White, “Modeling of transient response in far infrared photoconductors,” in Proceedings of the European Space Agency Symposium on Submillimetre and Far-Infrared Space Instrumentation (European Space Agency, Noordwijk, 1996) SP-388, pp. 15–21.
  15. A. M. White, “The characteristics of minority carrier exclusion in narrow direct-gap semiconductors,” Infrared Phys. 25, 729–741 (1985). [CrossRef]
  16. N. M. Haegel, J. W. Beeman, P. N. Luke, E. E. Haller, “Transient photoconductivity in Ge:Be due to Be+ formation,” Phys. Rev. B 39, 3677–3682 (1989). [CrossRef]

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