Elastic Laser Light Scattering by GaAs Surfaces
Applied Optics, Vol. 38, Issue 12, pp. 2666-2676 (1999)
http://dx.doi.org/10.1364/AO.38.002666
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Abstract
Angle-resolved scattering (ARS) intensities were measured in the backscattering hemisphere for the (1 0 0) and (1 1 1) faces of GaAs single crystals. Three epitaxial layers were deposited onto the GaAs (1 0 0) single-crystalline wafers. The laser elastic light scattering shows the presence of a regular surface microrelief whose orientation corresponds to the crystallographic axes in the surface plane. We studied the statistical properties of this microrelief and determined the parameters that characterize the surface. We propose to use the ARS ratio for two wavelengths (in our case, 632.8 and 441.6 nm) to determine the topographical properties of scattering and to study crystal surface defects.
© 1999 Optical Society of America
[Optical Society of America ]
OCIS Codes
(120.6660) Instrumentation, measurement, and metrology : Surface measurements, roughness
(240.0240) Optics at surfaces : Optics at surfaces
(290.5820) Scattering : Scattering measurements
(290.5870) Scattering : Scattering, Rayleigh
(290.5880) Scattering : Scattering, rough surfaces
Citation
Valeriy A. Sterligov, Yuri V. Subbota, Yuri M. Shirshov, Lidia P. Pochekaylova, Eugene F. Venger, Raisa V. Konakova, and Igor Yu. Ilyin, "Elastic Laser Light Scattering by GaAs Surfaces," Appl. Opt. 38, 2666-2676 (1999)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-38-12-2666
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