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Applied Optics

Applied Optics


  • Vol. 38, Iss. 12 — Apr. 20, 1999
  • pp: 2666–2676

Elastic laser light scattering by GaAs surfaces

Valeriy A. Sterligov, Yuri V. Subbota, Yuri M. Shirshov, Lidia P. Pochekaylova, Eugene F. Venger, Raisa V. Konakova, and Igor Yu. Ilyin  »View Author Affiliations

Applied Optics, Vol. 38, Issue 12, pp. 2666-2676 (1999)

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Angle-resolved scattering (ARS) intensities were measured in the backscattering hemisphere for the (1 0 0) and (1 1 1) faces of GaAs single crystals. Three epitaxial layers were deposited onto the GaAs (1 0 0) single-crystalline wafers. The laser elastic light scattering shows the presence of a regular surface microrelief whose orientation corresponds to the crystallographic axes in the surface plane. We studied the statistical properties of this microrelief and determined the parameters that characterize the surface. We propose to use the ARS ratio for two wavelengths (in our case, 632.8 and 441.6 nm) to determine the topographical properties of scattering and to study crystal surface defects.

© 1999 Optical Society of America

OCIS Codes
(120.6660) Instrumentation, measurement, and metrology : Surface measurements, roughness
(240.0240) Optics at surfaces : Optics at surfaces
(290.5820) Scattering : Scattering measurements
(290.5870) Scattering : Scattering, Rayleigh
(290.5880) Scattering : Scattering, rough surfaces

Original Manuscript: April 9, 1998
Revised Manuscript: October 15, 1998
Published: April 20, 1999

Valeriy A. Sterligov, Yuri V. Subbota, Yuri M. Shirshov, Lidia P. Pochekaylova, Eugene F. Venger, Raisa V. Konakova, and Igor Yu. Ilyin, "Elastic laser light scattering by GaAs surfaces," Appl. Opt. 38, 2666-2676 (1999)

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