Annealing Behavior of Barriers in Ion-Implanted LiNbO3 and LiTaO3 Planar Waveguides
Applied Optics, Vol. 38, Issue 24, pp. 5122-5126 (1999)
http://dx.doi.org/10.1364/AO.38.005122
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Abstract
We formed planar waveguides in LiNbO3 and LiTaO3 crystals by megaelectron volt He-ion implantation. The dark modes of both waveguides are measured and their refractive-index profiles are described according to the parameterized index profile reconstruction method. The extraordinary indices of both ion-implanted waveguides exhibit quite different profiles. We compare the thermal stability of barriers in ion-implanted LiNbO3 and LiTaO3 waveguides by annealing at different temperatures. The results show that the barrier in a LiTaO3 planar waveguide has higher thermal stability than that in a LiNbO3 waveguide. The experiments also show that annealing at a temperature higher than 400 °C results in recrystallization of the barrier.
© 1999 Optical Society of America
[Optical Society of America ]
OCIS Codes
(130.2790) Integrated optics : Guided waves
(130.3120) Integrated optics : Integrated optics devices
Citation
Fei Lu, Feng Xiang Wang, Wei Li, Jian Hua Zhang, and Ke Ming Wang, "Annealing Behavior of Barriers in Ion-Implanted LiNbO3 and LiTaO3 Planar Waveguides," Appl. Opt. 38, 5122-5126 (1999)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-38-24-5122
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