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Applied Optics

Applied Optics


  • Vol. 38, Iss. 24 — Aug. 20, 1999
  • pp: 5122–5126

Annealing behavior of barriers in ion-implanted LiNbO3 and LiTaO3 planar waveguides

Fei Lu, Feng Xiang Wang, Wei Li, Jian Hua Zhang, and Ke Ming Wang  »View Author Affiliations

Applied Optics, Vol. 38, Issue 24, pp. 5122-5126 (1999)

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We formed planar waveguides in LiNbO3 and LiTaO3 crystals by megaelectron volt He-ion implantation. The dark modes of both waveguides are measured and their refractive-index profiles are described according to the parameterized index profile reconstruction method. The extraordinary indices of both ion-implanted waveguides exhibit quite different profiles. We compare the thermal stability of barriers in ion-implanted LiNbO3 and LiTaO3 waveguides by annealing at different temperatures. The results show that the barrier in a LiTaO3 planar waveguide has higher thermal stability than that in a LiNbO3 waveguide. The experiments also show that annealing at a temperature higher than 400 °C results in recrystallization of the barrier.

© 1999 Optical Society of America

OCIS Codes
(130.2790) Integrated optics : Guided waves
(130.3120) Integrated optics : Integrated optics devices

Original Manuscript: March 29, 1999
Published: August 20, 1999

Fei Lu, Feng Xiang Wang, Wei Li, Jian Hua Zhang, and Ke Ming Wang, "Annealing behavior of barriers in ion-implanted LiNbO3 and LiTaO3 planar waveguides," Appl. Opt. 38, 5122-5126 (1999)

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