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Applied Optics

Applied Optics


  • Vol. 38, Iss. 27 — Sep. 20, 1999
  • pp: 5781–5784

High-power diode-pumped AlGaAs surface-emitting laser

Mark A. Holm, David Burns, Pasquale Cusumano, Allister I. Ferguson, and Martin D. Dawson  »View Author Affiliations

Applied Optics, Vol. 38, Issue 27, pp. 5781-5784 (1999)

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We report the development and characterization of an efficient diode-pumped surface-emitting semiconductor laser operating at ∼870 nm. By using a semiconductor Bragg reflector stack/multiple GaAs quantum well structure, mounted within a conventional laser cavity, we achieved single transverse mode laser output powers of 153 mW. Self-tuning over a 15-nm spectral range has been obtained.

© 1999 Optical Society of America

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.6630) Lasers and laser optics : Superradiance, superfluorescence
(250.7270) Optoelectronics : Vertical emitting lasers

Original Manuscript: April 12, 1999
Revised Manuscript: June 17, 1999
Published: September 20, 1999

Mark A. Holm, David Burns, Pasquale Cusumano, Allister I. Ferguson, and Martin D. Dawson, "High-power diode-pumped AlGaAs surface-emitting laser," Appl. Opt. 38, 5781-5784 (1999)

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