Deposition at Low Substrate Temperatures of High-Quality TiO2 Films by Radical Beam-Assisted Evaporation
Applied Optics, Vol. 38, Issue 31, pp. 6638-6641 (1999)
http://dx.doi.org/10.1364/AO.38.006638
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Abstract
We deposited high-quality TiO2 films by an oxygen-radical beam–assisted evaporation (RBE) method at a lower substrate temperature (Ts) than that for a TiO2 film deposited by conventional thermal evaporation (TE) with neutral-oxygen gas. The films were then evaluated in terms of refractive index, shift of wavelength of a peak in the reflection curve, and absorption coefficient. The TiO2 films deposited by RBE at Ts < 473 K showed higher refractive indices, were more compact, and had lower absorption coefficients than the film deposited by TE at Ts = 473 K.
© 1999 Optical Society of America
[Optical Society of America ]
OCIS Codes
(160.4670) Materials : Optical materials
(310.1620) Thin films : Interference coatings
(310.6860) Thin films : Thin films, optical properties
Citation
Yasumi Yamada, Haruo Uyama, Shigeyuki Watanabe, and Hisakazu Nozoye, "Deposition at Low Substrate Temperatures of High-Quality TiO2 Films by Radical Beam-Assisted Evaporation," Appl. Opt. 38, 6638-6641 (1999)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-38-31-6638
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