Defect Formation in Hafnium Dioxide Thin Films
Applied Optics, Vol. 39, Issue 10, pp. 1589-1599 (2000)
http://dx.doi.org/10.1364/AO.39.001589
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Abstract
Hafnium dioxide thin films were deposited by reactive electron-beam evaporation at six different substrate temperatures on fused-silica substrates. During the depositions, the scattering of light caused by the growth of defects in the films was recorded with in situ total internal reflection microscopy. After deposition the films were analyzed by angle-resolved scatterometery, spectrophotometric measurement of film reflectance and transmittance, atomic force microscopy, and x-ray diffraction. We explore the effects of film defect formation on film optical properties and film surface topography using these data.
© 2000 Optical Society of America
[Optical Society of America ]
OCIS Codes
(310.0310) Thin films : Thin films
(310.1860) Thin films : Deposition and fabrication
(310.3840) Thin films : Materials and process characterization
(310.6860) Thin films : Thin films, optical properties
Citation
David Reicher, Paul Black, and Kenneth Jungling, "Defect Formation in Hafnium Dioxide Thin Films," Appl. Opt. 39, 1589-1599 (2000)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-39-10-1589
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