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Applied Optics

Applied Optics


  • Vol. 39, Iss. 10 — Apr. 1, 2000
  • pp: 1611–1616

Correlation between optical path modulations and transmittance spectra of a-Si:H thin films

Barış Akaoğlu, İsmail Atılgan, and Bayram Katırcıoğlu  »View Author Affiliations

Applied Optics, Vol. 39, Issue 10, pp. 1611-1616 (2000)

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The optical constants of plasma-enhanced chemical-vapor-deposited amorphous silicon (a-Si:H) thin film upon a transparent substrate are determined within the UV–visible region by measurement of the transmittance spectrum. Apart from thickness irregularities, the effects of vertical film inhomogeneities (refractive-index distribution) on the spectrum are discussed. In this respect, although consideration of any possible variation in thickness of the film within the area illuminated by the probe beam is sufficient for correcting the modulation of the extrema of interference fringes, including in the model the thin transitional regions at substrate–film and film–air interfaces might be an alternative method for understanding the overall optical behavior of the spectrum.

© 2000 Optical Society of America

OCIS Codes
(160.2750) Materials : Glass and other amorphous materials
(300.6540) Spectroscopy : Spectroscopy, ultraviolet
(300.6550) Spectroscopy : Spectroscopy, visible
(310.6860) Thin films : Thin films, optical properties

Original Manuscript: July 21, 1999
Revised Manuscript: January 5, 2000
Published: April 1, 2000

Barış Akaoğlu, İsmail Atılgan, and Bayram Katırcıoğlu, "Correlation between optical path modulations and transmittance spectra of a-Si:H thin films," Appl. Opt. 39, 1611-1616 (2000)

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  1. S. Shokhovets, R. Goldhahn, V. Cimalla, T. S. Cheng, C. T. Foxon, “Reflectivity study of hexagonal GaN films grown on GaAs: surface roughness, interface layer, and refractive index,” J. Appl. Phys. 84, 1561–1566 (1998). [CrossRef]
  2. J. Rivory, “Characterization of inhomogeneous dielectric films by spectroscopic ellipsometry,” Thin Solid Films 313–314, 333–340 (1998). [CrossRef]
  3. A. V. Tikhonravov, M. K. Trubetskov, A. V. Krasilnikova, “Spectroscopic ellipsometry of slightly inhomogeneous nonabsorbing thin films with arbitrary refractive-index profiles: theoretical study,” Appl. Opt. 37, 5902–5911 (1998). [CrossRef]
  4. K. V. Popov, A. V. Tikhonravov, J. Campmany, E. Bertran, S. Bosch, A. Canillas, “Spectroscopic ellipsometric characterization of transparent thin film amorphous electronic materials: integrated analysis,” Thin Solid Films 313–314, 379–383 (1998). [CrossRef]
  5. S. Callard, A. Gagnaire, J. Joseph, “Characterization of graded refractive index silicon oxynitride thin films by spectroscopic ellipsometry,” Thin Solid Films 313–314, 384–388 (1998). [CrossRef]
  6. K. Lamprecht, W. Papousek, G. Leising, “Problem of ambiguity in the determination of optical constants of thin absorbing films from spectroscopic reflectance and transmittance measurements,” Appl. Opt. 36, 6364–6371 (1997). [CrossRef]
  7. J. C. Manifacier, J. Gasiot, J. P. Fillard, “A simple method for the determination of the optical constants n, k and the thickness of a weakly absorbing thin film,” J. Phys. 9, 1002–1004 (1976).
  8. O. S. Heavens, Optical Properties of Thin Solid Films (Dover, New York, 1965), pp. 46–62.
  9. R. Swanepoel, “Determination of the thickness and optical constants of amorphous silicon,” J. Phys. 16, 1214–1222 (1983).
  10. D. A. Minkov, “Method for determining the optical constants of a thin film on a transparent substrate,” J. Phys. D 22, 199–205 (1989). [CrossRef]
  11. J. I. Cisneros, “Optical characterization of dielectric and semiconductor thin films by use of transmission data,” Appl. Opt. 37, 5262–5270 (1998). [CrossRef]
  12. A. V. Tikhonravov, M. K. Trubetskov, B. T. Sullivan, J. A. Dobrowolski, “Influence of small inhomogeneities on the spectral characteristics of single thin films,” Appl. Opt. 36, 7188–7198 (1997). [CrossRef]
  13. R. Swanepoel, “Determination of surface roughness and optical constants of inhomogeneous amorphous silicon films,” J. Phys. E 17, 896–903 (1984). [CrossRef]
  14. R. Jacobsson, “Light reflection from films of continuously varying refractive index,” Prog. Opt. 2, 247–286 (1966). [CrossRef]
  15. M. Born, E. Wolf, Principles of Optics, 4th. ed. (Pergamon, London, 1970), pp. 55–60.
  16. S. A. Furman, A. V. Tikhonravov, Basics of Optics of Multilayer Systems (Editions Frontiers, Gif-sur-Yvette, France, 1992), pp. 1–26.
  17. M. Yamaguchi, K. Morigaki, “Effect of hydrogen dilution on the optical properties of hydrogenated amorphous silicon prepared by plasma deposition,” Philos. Mag. B 79, 387–405 (1999). [CrossRef]
  18. E. C. Freeman, W. Paul, “Optical constants of rf sputtered hydrogenated amorphous Si,” Phys. Rev. B 20, 716–728 (1979). [CrossRef]
  19. M. H. Brodsky, R. S. Title, K. Weiser, F. D. Pettit, “Structural, optical, and electrical properties of amorphous silicon films,” Phys. Rev. B 1, 2632–2640 (1970). [CrossRef]
  20. M. Harris, H. A. Macleod, S. Ogura, “The relationship between optical inhomogeneity and film structure,” Thin Solid Films 57, 173–178 (1979). [CrossRef]
  21. W. M. M. Kessels, R. J. Severans, M. C. M. Van de Sanden, D. C. Schram, “Temperature and growth-rate effects on the hydrogen incorporation in a-Si:H,” J. Non-Cryst. Solids 227–230, 133–137 (1998). [CrossRef]
  22. D. Das, S. M. Iftiquar, A. K. Barua, “Wide optical gap a-SiO:H films prepared by rf glow discharge,” J. Non-Cryst. Solids 210, 148–154 (1997). [CrossRef]
  23. A. Masuda, K. Itoh, K. Matsuda, Y. Yonezawa, M. Kumeda, T. Shimizu, “Nitrogen-doping effects on electrical, optical and structural properties in hydrogenated amorphous silicon,” J. Appl. Phys. 81, 6729–6737 (1997). [CrossRef]
  24. J. R. Elmiger, M. Kunst, “Investigation of the silicon–plasma silicon nitride interface with in situ transient photoconductivity measurements,” Appl. Surf. Sci. 103, 11–18 (1996). [CrossRef]
  25. R. Ruther, J. Livingstone, N. Dytlowski, D. Cohen, “Improved hydrogen depth profiles with in-chamber annealing of hydrogenated amorphous silicon thin films,” J. Appl. Phys. 79, 175–178 (1996). [CrossRef]

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