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Applied Optics

Applied Optics


  • Vol. 39, Iss. 14 — May. 10, 2000
  • pp: 2359–2366

Crystallization and amorphization studies of a Ge2Sb2.3Te5 thin-film sample under pulsed laser irradiation

Pramod K. Khulbe, Xiaodong Xun, and M. Mansuripur  »View Author Affiliations

Applied Optics, Vol. 39, Issue 14, pp. 2359-2366 (2000)

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We present the results of crystallization and amorphization studies on a thin-film sample of Ge2Sb2.3Te5, encapsulated in a quadrilayer stack as in the media of phase-change optical disk data storage. The study was conducted on a two-laser static tester in which one laser, operating in pulsed mode, writes either amorphous marks on a crystalline film or crystalline marks on an amorphous film. The second laser, operating at low power in the cw mode, simultaneously monitors the progress of mark formation in terms of the variations of reflectivity both during the write pulse and in the subsequent cooling period. In addition to investigating some of the expected features associated with crystallization and amorphization, we noted certain curious phenomena during the mark-formation process. For example, at low-power pulsed illumination, which is insufficient to trigger the phase transition, there is a slight change in the reflectivity of the sample. This is believed to be caused by a reversible change in the complex refractive index of the Ge2Sb2.3Te5 film in the course of heating above the ambient temperature. We also observed that the mark-formation process may continue for as long as 1 µs beyond the end of the write laser pulse. This effect is especially pronounced during amorphous mark formation under high-power, long-pulse illumination.

© 2000 Optical Society of America

OCIS Codes
(210.0210) Optical data storage : Optical data storage
(210.4590) Optical data storage : Optical disks
(210.4770) Optical data storage : Optical recording
(210.4810) Optical data storage : Optical storage-recording materials

Original Manuscript: September 22, 1999
Revised Manuscript: January 18, 2000
Published: May 10, 2000

Pramod K. Khulbe, Xiaodong Xun, and M. Mansuripur, "Crystallization and amorphization studies of a Ge2Sb2.3Te5 thin-film sample under pulsed laser irradiation," Appl. Opt. 39, 2359-2366 (2000)

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  1. T. Ide, M. Okada, “Jitter improvement in mark edge recording for phase-change optical disk with optical phase encoding,” Appl. Phys. Lett. 64, 1613–1614 (1994). [CrossRef]
  2. C. Peng, M. Mansuripur, W. M. Kim, S. G. Kim, “Edge detection in phase-change optical data storage,” Appl. Phys. Lett. 71, 2088–2090 (1997). [CrossRef]
  3. J. H. Coombs, A. P. J. M. Jongenelis, W. van Es-Spiekman, B. A. J. Jacobs, “Laser-induced crystallization phenomena in Ge-Te-based alloys. I. Characterization of nucleation and growth,” J. Appl. Phys. 78, 4906–4913 (1995). [CrossRef]
  4. T. Ohta, K. Nagata, I. Satoh, R. Imanaka, “Overwritable phase-change optical disk recording,” IEEE Trans. Magnet. 34, 426–431 (1998). [CrossRef]
  5. K. Nishiuchi, N. Yamada, N. Akahira, M. Takenaga, R. Akutagawa, “Laser diode beam exposure instrument for rapid quenching of thin-film material,” Rev. Sci. Instrum. 63, 3425–3430 (1992). [CrossRef]
  6. N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, M. Takao, “Rapid-phase transition of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory,” J. Appl. Phys. 69, 2849–2856 (1991). [CrossRef]
  7. M. Chen, K. Rubin, R. Barton, “Compound material for reversible, phase-change optical data storage,” Appl. Phys. Lett. 49, 502–504 (1986). [CrossRef]
  8. M. Chen, K. A. Rubin, V. Marrello, U. G. Gerber, V. B. Jipson, “Reversibility and stability of tellurium alloys for optical data storage applications,” Appl. Phys. Lett. 46, 734–736 (1985). [CrossRef]
  9. M. Mansuripur, J. K. Erwin, W. Bletscher, P. Khulbe, K. Sadeghi, X. Xun, A. Gupta, S. B. Mendes, “Static tester for characterization of phase-change, dye-polymer, and magneto-optical media for optical data storage,” Appl. Opt. 38, 7095–7104 (1999). [CrossRef]
  10. T. Ohta, N. Akahira, S. Ohara, I. Satoh, “High-density phase-change optical recording,” Optoelectron. Devices Technol. 10, 361–380 (1995).
  11. T. Ohta, “Study of phase-change optical disk memory,” Ph.D. dissertation (Osaka Prefecture University, Osaka, Japan, 1995).
  12. TEMPROFILE is a product of MM Research Inc., Tucson, Arizona. The theoretical basis of the program is described in M. Mansuripur, G. A. N. Connell, J. W. Goodman, “Laser-induced local heating of multilayers,” Appl. Opt. 21, 1106–1114 (1982) and in M. Mansuripur, G. A. N. Connell, “Laser-induced local heating of moving multilayer media,” Appl. Opt. 22, 666–670 (1983).

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