Abstract

The strip coating material, Opticlean, which has been reformulated, has been shown to remove 1–5-µm-diameter particles as well as contamination remaining from previous drag wipe cleaning on a used silicon wafer. In addition, no residue that produced scattering was found on a fresh silicon wafer when Opticlean was applied and then stripped off. The total integrated scattering technique used for the measurements could measure scattering levels of He–Ne laser light as low as a few ppm (parts in 10⁶), corresponding to a surface roughness of <1 Å rms.

© 2000 Optical Society of America

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