Reflectance Measurements and Optical Constants in the Extreme Ultraviolet for Thin Films of Ion-Beam-Deposited SiC, Mo, Mg2Si, and InSb and of Evaporated Cr
Applied Optics, Vol. 39, Issue 16, pp. 2772-2781 (2000)
http://dx.doi.org/10.1364/AO.39.002772
Acrobat PDF (159 KB)
Abstract
Reflectance measurements and optical constants of thin films of ion-beam-deposited SiC, Mo, Mg2Si, and InSb and of evaporated Cr have been measured in the extreme-ultraviolet (EUV) spectral region from 49.0 to 200.0 nm. In this spectral region no optical constant data were available for materials deposited by ion-beam deposition. We compared our data with those for bulk samples and for thin films prepared by different techniques. The goal of this research has been to study candidate materials for multilayer coatings in the EUV.
© 2000 Optical Society of America
OCIS Codes
(120.4530) Instrumentation, measurement, and metrology : Optical constants
(120.5700) Instrumentation, measurement, and metrology : Reflection
(240.0310) Optics at surfaces : Thin films
(260.7200) Physical optics : Ultraviolet, extreme
(260.7210) Physical optics : Ultraviolet, vacuum
(310.1620) Thin films : Interference coatings
Citation
Juan I. Larruquert and Ritva A. M. Keski-Kuha, "Reflectance Measurements and Optical Constants in the Extreme Ultraviolet for Thin Films of Ion-Beam-Deposited SiC, Mo, Mg2Si, and InSb and of Evaporated Cr," Appl. Opt. 39, 2772-2781 (2000)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-39-16-2772
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