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Applied Optics

Applied Optics


  • Vol. 39, Iss. 18 — Jun. 20, 2000
  • pp: 3138–3142

Displacement measurement that uses transient photoelectromotive force effects in CdTe:V with frequency-modulated lasers

Feng Jin, Jacob B. Khurgin, Chen-Chia Wang, Sudhir Trivedi, Yehuda Gabay, Esam Gad, Doyle A. Temple, and Uwe H. Hommerich  »View Author Affiliations

Applied Optics, Vol. 39, Issue 18, pp. 3138-3142 (2000)

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A new method of displacement measurement that uses the transient photoelectromotive force effects that arise in semiconductors illuminated by two frequency-modulated lasers is proposed and demonstrated experimentally. A height resolution of 0.85 µm was achieved experimentally; theoretical analysis charts the path toward eventual improvement of this resolution.

© 2000 Optical Society of America

OCIS Codes
(040.5350) Detectors : Photovoltaic
(120.0280) Instrumentation, measurement, and metrology : Remote sensing and sensors
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(160.5320) Materials : Photorefractive materials
(280.3400) Remote sensing and sensors : Laser range finder

Original Manuscript: October 16, 1999
Revised Manuscript: April 3, 2000
Published: June 20, 2000

Feng Jin, Jacob B. Khurgin, Chen-Chia Wang, Sudhir Trivedi, Yehuda Gabay, Esam Gad, Doyle A. Temple, and Uwe H. Hommerich, "Displacement measurement that uses transient photoelectromotive force effects in CdTe:V with frequency-modulated lasers," Appl. Opt. 39, 3138-3142 (2000)

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