A new method of displacement measurement that uses the transient photoelectromotive force effects that arise in semiconductors illuminated by two frequency-modulated lasers is proposed and demonstrated experimentally. A height resolution of 0.85 μm was achieved experimentally; theoretical analysis charts the path toward eventual improvement of this resolution.
© 2000 Optical Society of America
(040.5350) Detectors : Photovoltaic
(120.0280) Instrumentation, measurement, and metrology : Remote sensing and sensors
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(160.5320) Materials : Photorefractive materials
(280.3400) Remote sensing and sensors : Laser range finder
Feng Jin, Jacob B. Khurgin, Chen-Chia Wang, Sudhir Trivedi, Yehuda Gabay, Esam Gad, Doyle A. Temple, and Uwe H. Hommerich, "Displacement Measurement that uses Transient Photoelectromotive Force Effects in CdTe:V with Frequency-Modulated Lasers," Appl. Opt. 39, 3138-3142 (2000)