A scanning critical illumination system is designed to couple a synchrotron radiation source to a three-aspherical-mirror imaging system for extreme ultraviolet lithography. A static illumination area of <i>H</i> × <i>V</i> = 8 mm × 3 mm (where <i>H</i> is horizontal and <i>V</i> is vertical) can be obtained. Uniform intensity distribution and a large ring field of <i>H</i> × <i>V</i> = 150 mm × 3 mm can be achieved by scanning of the mirror of the condenser. The coherence factor (ς) of this illumination system is ~0.6, with the same beam divergence in both the horizontal and the vertical directions. We describe the performance of the imaging optics at ς = 0.6 to confirm that the illumination optics can meet the requirements for three-aspherical-mirror imaging optics with a feature size of 0.06 μm.
© 2000 Optical Society of America
Yanqiu Li, Hiroo Kinoshita, Takeo Watanabe, Shigeo Irie, Shigeru Shirayone, and Shinji Okazaki, "Illumination System Design for a Three-Aspherical-Mirror Projection Camera for Extreme-Ultraviolet Lithography," Appl. Opt. 39, 3253-3260 (2000)