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Applied Optics

Applied Optics


  • Vol. 39, Iss. 25 — Sep. 1, 2000
  • pp: 4649–4657

Investigation of a half-wave method for birefringence or thickness measurements of a thick, semitransparent, uniaxial, anisotropic substrate by use of spectroscopic ellipsometry

M. Kildemo, M. Mooney, C. Sudre, and P. V. Kelly  »View Author Affiliations

Applied Optics, Vol. 39, Issue 25, pp. 4649-4657 (2000)

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A half-wave method of measurement of wafer birefringence that is based on interference fringes recorded from a uniaxial wafer by use of a standard phase-modulated spectroscopic ellipsometer is investigated. The birefringence of uniaxial wafers is calculated from the extremal points in the recorded oscillating intensities. A formalism is developed to incorporate the change in birefringence with wavelength as a correction factor. The correction explains the overestimation of the birefringence from previous similar research on thick uniaxial sapphire substrates. The enhanced derivative of the birefringence that is due to polarization-dependent intraconduction band transitions is detected. Furthermore, for well-characterized wafers it is shown that this method can be used in wafer-thickness mapping of 4H-SiC and similar uniaxial high-bandgap semiconductors.

© 2000 Optical Society of America

OCIS Codes
(160.1190) Materials : Anisotropic optical materials
(260.1180) Physical optics : Crystal optics
(260.2130) Physical optics : Ellipsometry and polarimetry
(260.5430) Physical optics : Polarization

Original Manuscript: February 16, 2000
Revised Manuscript: May 23, 2000
Published: September 1, 2000

M. Kildemo, M. Mooney, C. Sudre, and P. V. Kelly, "Investigation of a half-wave method for birefringence or thickness measurements of a thick, semitransparent, uniaxial, anisotropic substrate by use of spectroscopic ellipsometry," Appl. Opt. 39, 4649-4657 (2000)

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