OSA's Digital Library

Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 39, Iss. 25 — Sep. 1, 2000
  • pp: 4649–4657

Investigation of a half-wave method for birefringence or thickness measurements of a thick, semitransparent, uniaxial, anisotropic substrate by use of spectroscopic ellipsometry

M. Kildemo, M. Mooney, C. Sudre, and P. V. Kelly  »View Author Affiliations


Applied Optics, Vol. 39, Issue 25, pp. 4649-4657 (2000)
http://dx.doi.org/10.1364/AO.39.004649


View Full Text Article

Enhanced HTML    Acrobat PDF (422 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

A half-wave method of measurement of wafer birefringence that is based on interference fringes recorded from a uniaxial wafer by use of a standard phase-modulated spectroscopic ellipsometer is investigated. The birefringence of uniaxial wafers is calculated from the extremal points in the recorded oscillating intensities. A formalism is developed to incorporate the change in birefringence with wavelength as a correction factor. The correction explains the overestimation of the birefringence from previous similar research on thick uniaxial sapphire substrates. The enhanced derivative of the birefringence that is due to polarization-dependent intraconduction band transitions is detected. Furthermore, for well-characterized wafers it is shown that this method can be used in wafer-thickness mapping of 4H-SiC and similar uniaxial high-bandgap semiconductors.

© 2000 Optical Society of America

OCIS Codes
(160.1190) Materials : Anisotropic optical materials
(260.1180) Physical optics : Crystal optics
(260.2130) Physical optics : Ellipsometry and polarimetry
(260.5430) Physical optics : Polarization

History
Original Manuscript: February 16, 2000
Revised Manuscript: May 23, 2000
Published: September 1, 2000

Citation
M. Kildemo, M. Mooney, C. Sudre, and P. V. Kelly, "Investigation of a half-wave method for birefringence or thickness measurements of a thick, semitransparent, uniaxial, anisotropic substrate by use of spectroscopic ellipsometry," Appl. Opt. 39, 4649-4657 (2000)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-39-25-4649


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. S.-M. F. Nee, “Birefringence characterization using transmission ellipsometry,” in Polarization Analysis and Measurement, D. H. Goldstein, R. A. Chipman, eds., Proc. SPIE1746, 269–280 (1992). [CrossRef]
  2. R. Ossikovski, M. Kildemo, M. Stchakovsky, M. Mooney, “Anisotropic incoherent reflection model for spectroscopic ellipsometry of a thick semitransparent anisotropic substrate,” Appl. Opt. 39, 2071–2077 (2000). [CrossRef]
  3. I. J. Hodgkinson, Birefringent Thin Films and Polarizing Elements (World Scientific, Singapore, 1997), Chaps. 7 and 8.
  4. J. F. Elman, J. Greener, C. M. Herzinger, B. Johs, “Characterization of biaxially stretched plastic films by generalized ellipsometry,” Thin Solid Films 313–314, 814–818 (1998).
  5. N. Adolph, K. Tenelsen, V. I. Gavrilenko, F. Bechstedt, “Optical and loss spectra of SiC polytypes from ab initio calculations,” Phys. Rev. B 55, 1422–1429 (1997). [CrossRef]
  6. A. Zuber, H. Jancher, N. Kaiser, “Perpendicular-incidence photometric ellipsometry of biaxial anisotropic thin films,” Appl. Opt. 35, 5553–5556 (1996). [CrossRef] [PubMed]
  7. M. Kildemo, M. Mooney, C. Sudre, P. Kelly, G. Crean, “Anisotropic dielectric function of semi-insulating 4H-SiC using spectroscopic ellipsometry and an incoherent reflection model of a thick transparent anisotropic substrate,” Mater. Sci. Forum 338–342, 571–574 (2000).
  8. G. I. Surdutovich, R. Z. Vitlina, A. V. Ghiner, S. F. Durrant, V. Baranauskas, “Three polarization reflectometry methods for determination of optical anisotropy,” Appl. Opt. 37, 65–78 (1998). [CrossRef]
  9. See, for example, W. J. Choyke, G. Pensl, “Physical properties of SiC,” MRS Bull. 22, 25–29 (1997).
  10. B. Drévillon, “Phase modulated ellipsometry from the ultraviolet to the infrared: in situ applications to the growth of semiconductors,” Prog. Cryst. Growth Charact. 27, 1–87 (1993).
  11. R. M. A. Azzam, N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, Amsterdam, The Netherlands, 1977), pp. 358, 491.
  12. J. Lekner, “Optical properties of a uniaxial layer,” Pure Appl. Opt. 3, 821–837 (1994). [CrossRef]
  13. M. Kildemo, O. Hunderi, “Spectroscopic Fourier methods for thickness measurements of thick uniaxial wafers with dispersive birefringence using polarimetric techniques,” J. Opt. A: Pure Appl. Opt. (to be published).
  14. E. Biedermann, “The optical absorption bands and their anisotropy in the various modifications of SiC,” Solid State Commun. 3, 343–346 (1965). [CrossRef]
  15. S. Limpijumnong, W. R. L. Lambrecht, S. N. Rashkeev, B. Segall, “Optical absorption bands in the 1–3-eV range in n-type SiC polytypes,” Phys. Rev. B 59, 12890–12899 (1999). [CrossRef]
  16. S. Logothedis, J. Petalas, “Dielectric function and reflectivity of 2C-silicon carbide and the component perpendicular to the c axis of 6H-silicon carbide in the energy region 1.5–9.5 eV,” J. Appl. Phys. 80, 1768–1772 (1996). [CrossRef]
  17. W. J. Choyke, E. D. Palik, “Silicon carbide (SiC),” in Handbook of Optical Constants of Solids, E. D. Palik, ed. (Academic, Orlando, Fla., 1985), p. 587. [CrossRef]
  18. M. Kildemo, R. Ossikovski, M. Stchakovsky, “Measurement of the absorption edge of thick transparent substrates using an incoherent reflection model and spectroscopic UV–visible–near-IR ellipsometry,” Thin Solid Films 313–314, 108–113 (1997).
  19. S. Zollner, J. G. Chen, E. Duda, T. Wetteroth, S. R. Wilson, J. N. Hilfiker, “Dielectric function of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si,” J. Appl. Phys. 83, 8353–8361 (1999). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited