We present the experimental study of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift. The isolator is equipped with an optical interferometer composed of tapered couplers, nonreciprocal phase shifters, and a reciprocal phase shifter. The nonreciprocal phase shifter was constructed by wafer direct bonding between the semiconductor guiding layer and the magneto-optic cladding layer. The isolator, designed for the 1.55-μm wavelength, was fabricated to investigate the characteristics of each component. By applying an external magnetic field to the nonreciprocal phase shifter, we achieved an isolation ratio of approximately 4.9 dB in the interferometric isolator.
© 2000 Optical Society of America
Hideki Yokoi, Tetsuya Mizumoto, Nobuhiro Shinjo, Naoki Futakuchi, and Yoshiaki Nakano, "Demonstration of an Optical Isolator with a Semiconductor Guiding Layer that was Obtained by Use of a Nonreciprocal Phase Shift," Appl. Opt. 39, 6158-6164 (2000)