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Applied Optics

Applied Optics


  • Vol. 39, Iss. 36 — Dec. 20, 2000
  • pp: 6806–6813

Single-mode operation of a broad-area semiconductor laser with an anamorphic external cavity: experimental and numerical results

Sylvain Mailhot, Yves Champagne, and Nathalie McCarthy  »View Author Affiliations

Applied Optics, Vol. 39, Issue 36, pp. 6806-6813 (2000)

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The emission of high-power broad-area semiconductor lasers inherently contains many lateral modes that increase the beam divergence and reduce the spatial coherence. Elimination of higher-order lateral modes from the output beams of commercially available broad-area lasers will be beneficial in many applications of these lasers. Experimental results obtained with a broad-area laser coupled to an anamorphic external cavity are presented and are compared with the predictions from our numerical model. We have predicted and observed with the anamorphic external cavity a greatly improved discrimination against high-order lateral modes. The measurement of the spectrally resolved near-field intensity patterns provides much more comprehensive information on their longitudinal- and lateral-mode content than do observations of near-field and far-field beam intensity profiles. With a broad-area laser of 100-mW nominal power, it has been possible to extract 40% of the maximal power in a stable single-lateral and single-longitudinal mode regime.

© 2000 Optical Society of America

OCIS Codes
(140.3410) Lasers and laser optics : Laser resonators
(140.3570) Lasers and laser optics : Lasers, single-mode
(140.5960) Lasers and laser optics : Semiconductor lasers

Original Manuscript: June 19, 2000
Revised Manuscript: September 1, 2000
Published: December 20, 2000

Sylvain Mailhot, Yves Champagne, and Nathalie McCarthy, "Single-mode operation of a broad-area semiconductor laser with an anamorphic external cavity: experimental and numerical results," Appl. Opt. 39, 6806-6813 (2000)

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