The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 µm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented.
© 2000 Optical Society of America
Original Manuscript: January 27, 2000
Revised Manuscript: August 25, 2000
Published: December 20, 2000
Philip A. Hiskett, Gerald S. Buller, Alison Y. Loudon, Jason M. Smith, Ivair Gontijo, Andrew C. Walker, Paul D. Townsend, and Michael J. Robertson, "Performance and design of InGaAs/InP photodiodes for single-photon counting at 1.55 µm," Appl. Opt. 39, 6818-6829 (2000)