Thin-film interference filters, suitable for use on GaAs- and InP-based lasers, have been fabricated by use of the electron–cyclotron resonance plasma-enhanced chemical vapor deposition technique. Multilayer film structures composed of silicon oxynitride material have been deposited at low temperatures with an <i>in situ</i> rotating compensator ellipsometer for monitoring the index of refraction and thickness of the deposited layers. Individual layers with an index of refraction from 3.3 to 1.46 at 633 nm have been produced with a run-to-run reproducibility of 0.005 and a thickness control of 10 Å. Several filter designs have been implemented, including high-reflection filters, one- and two-layer anitreflection filters, and narrow-band high-reflection filters. It is shown that an accurate measurement of the filter optical properties during deposition is possible and that controlled reflectance spectra can be obtained.
© 2000 Optical Society of America
(120.2130) Instrumentation, measurement, and metrology : Ellipsometry and polarimetry
(140.2020) Lasers and laser optics : Diode lasers
(310.1620) Thin films : Interference coatings
(310.1860) Thin films : Deposition and fabrication
(310.3840) Thin films : Materials and process characterization
Marcel G. Boudreau, Steven G. Wallace, Ginutis Balcaitis, Sangeeta Murugkar, Harold K. Haugen, and Peter Mascher, "Application of In Situ Ellipsometry in the Fabrication of Thin-Film Optical Coatings on Semiconductors," Appl. Opt. 39, 1053-1058 (2000)