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Applied Optics

Applied Optics


  • Vol. 39, Iss. 7 — Mar. 1, 2000
  • pp: 1136–1147

Aberration measurement from specific photolithographic images: a different approach

Hiroshi Nomura, Kazuo Tawarayama, and Takuya Kohno  »View Author Affiliations

Applied Optics, Vol. 39, Issue 7, pp. 1136-1147 (2000)

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Techniques for measurement of higher-order aberrations of a projection optical system in photolithographic exposure tools have been established. Even-type and odd-type aberrations are independently obtained from printed grating patterns on a wafer by three-beam interference under highly coherent illumination. Even-type aberrations, i.e., spherical aberration and astigmatism, are derived from the best focus positions of vertical, horizontal, and oblique grating patterns by an optical microscope. Odd-type aberrations, i.e., coma and three-foil, are obtained by detection of relative shifts of a fine grating pattern to a large pattern by an overlay inspection tool. Quantitative diagnosis of lens aberrations with a krypton fluoride (KrF) excimer laser scanner is demonstrated.

© 2000 Optical Society of America

OCIS Codes
(120.3940) Instrumentation, measurement, and metrology : Metrology
(120.4630) Instrumentation, measurement, and metrology : Optical inspection
(220.1010) Optical design and fabrication : Aberrations (global)
(220.3740) Optical design and fabrication : Lithography
(220.4840) Optical design and fabrication : Testing

Original Manuscript: March 4, 1999
Revised Manuscript: November 29, 1999
Published: March 1, 2000

Hiroshi Nomura, Kazuo Tawarayama, and Takuya Kohno, "Aberration measurement from specific photolithographic images: a different approach," Appl. Opt. 39, 1136-1147 (2000)

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