Recently, the effects of doping on the emission frequency of GaAs diodes have been reported. At 78°K, 8667 Å (1.433 eV) was the longest wavelength for which stimulated emission has been observed. We report here that it has been possible to extend the long wavelength laser emission of GaAs diodes to better than 8700 Å at 77°K. A laser diode emitting at about 8700 Å is desirable, since this wavelength matches the lowest absorption band of Nd+3-doped lasers. An optical pump emitting at a single frequency matched to the lowest absorption band of a 3- or 4-level laser eliminates the adverse heating effects associated with flash lamp pumping, resulting in a considerable increase in the conversion efficiency.
R. H. Harada and C. K. Suzuki, "An Injection Laser Pump for Nd+3 Doped Hosts," Appl. Opt. 4, 225-227 (1965)