The performance of commercially available InGaAs/InP avalanche photodiodes as single-photon detectors at a 1.55-μm wavelength has been investigated. A new active quenching and gating circuit, tailored for operation of these diodes at temperatures in the range from room temperature to −60 °C and achievable by means of thermoelectrical cooling, has been developed. Careful tuning of the diodes’ operating conditions resulted in a significant reduction of afterpulsing effects; it permitted operation of the detectors with high repetition rates. A noise-equivalent power of 7 × 10−16 W/Hz1/2 was obtained at a 1.55-μm wavelength.
© 2001 Optical Society of America
Ivan Prochazka, "Peltier-Cooled and Actively Quenched Operation of InGaAs/InP Avalanche Photodiodes as Photon Counters at a 1.55-μm Wavelength," Appl. Opt. 40, 6012-6018 (2001)