The spectral responsivity of several types of silicon photodiode at oblique incidence (≈45°) is investigated. Both windowless diodes and diodes that incorporate quartz windows are considered. The spectral responsivities are measured directly for both parallel and perpendicular polarized radiation. For comparison, the responsivity at oblique incidence is also calculated from the normal-incidence measured responsivity in conjunction with the reflectance values at normal and oblique incidence calculated from thin-film theory by use of the measured oxide thicknesses of the diodes and published data on the refractive indices of silicon and fused silica. A technique, believed to be novel, is described for accurately measuring the oxide thicknesses of the diodes. A comparison of calculated and measured responsivity values shows that, when imperfect polarizers are used, it may be more accurate over a certain spectral range to calculate the responsivities at oblique incidence rather than to measure them directly. The additional uncertainty associated with the calculated responsivity values at oblique incidence, with respect to the original source data for normal incidence, is ∓1% over a wide spectral range.
[Optical Society of America ]
Louis-Philippe Boivin, "Spectral Responsivity of Various Types of Silicon Photodiode at Oblique Incidence: Comparison of Measured and Calculated Values," Appl. Opt. 40, 485-491 (2001)