We review the recent progress of electrically injected and optically pumped mid-IR lasers based on antimonide quantum wells with the type II W configuration. W quantum-well diodes have achieved cw operation up to 195 K at λ = 3.25 μm. Optically pumped devices that employ the diamond pressure bond heat sink have reached 290 K at 3 μm and 210 K at 6 μm. Pulsed power conversion efficiencies of up to 7% at 220 K have been attained by use of an optical pumping injection cavity approach, in which an etalon cavity for the pump beam significantly enhances its absorptance. The angled-grating distributed-feedback configuration has been used to obtain near-diffraction-limited output for an optical pumping stripe width of 50 μm.
© 2001 Optical Society of America
(140.2020) Lasers and laser optics : Diode lasers
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.3300) Lasers and laser optics : Laser beam shaping
(140.3490) Lasers and laser optics : Lasers, distributed-feedback
(140.5960) Lasers and laser optics : Semiconductor lasers
Christopher L. Felix, William W. Bewley, Igor Vurgaftman, Robert E. Bartolo, Donna W. Stokes, Jerry R. Meyer, Ming-Jey Yang, Hao Lee, Ray J. Menna, Ramon U. Martinelli, Dmitri Z. Garbuzov, John C. Connolly, Michael Maiorov, Alan R. Sugg, and Greg H. Olsen, "Mid-Infrared W Quantum-Well Lasers for Noncryogenic Continuous-Wave Operation," Appl. Opt. 40, 806-811 (2001)