Semiconductor Line Source for Low-Coherence Interferometry
Applied Optics, Vol. 40, Issue 6, pp. 913-915 (2001)
http://dx.doi.org/10.1364/AO.40.000913
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Abstract
The suitability for low-coherence interferometry of a high-power, semiconductor laser line source operated at a forward bias current below threshold is demonstrated. Measurements of the important characteristics of the source are presented. For example, the source produces an output power of 1.3 mW and a spatially uniform coherence length of 16 μm at a bias current of 86% of threshold (250 mA) at 20 °C. The usefulness of the source is verified by measurement of the line profile of a contact lens.
© 2001 Optical Society of America
OCIS Codes
(110.1650) Imaging systems : Coherence imaging
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(120.6650) Instrumentation, measurement, and metrology : Surface measurements, figure
(140.2010) Lasers and laser optics : Diode laser arrays
Citation
Andrei V. Zvyagin, Michael G. Garcia-Webb, and David D. Sampson, "Semiconductor Line Source for Low-Coherence Interferometry," Appl. Opt. 40, 913-915 (2001)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-40-6-913
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