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Applied Optics

Applied Optics


  • Vol. 40, Iss. 6 — Feb. 20, 2001
  • pp: 913–915

Semiconductor line source for low-coherence interferometry

Andrei V. Zvyagin, Michael G. Garcia-Webb, and David D. Sampson  »View Author Affiliations

Applied Optics, Vol. 40, Issue 6, pp. 913-915 (2001)

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The suitability for low-coherence interferometry of a high-power, semiconductor laser line source operated at a forward bias current below threshold is demonstrated. Measurements of the important characteristics of the source are presented. For example, the source produces an output power of 1.3 mW and a spatially uniform coherence length of 16 µm at a bias current of 86% of threshold (250 mA) at 20 °C. The usefulness of the source is verified by measurement of the line profile of a contact lens.

© 2001 Optical Society of America

OCIS Codes
(110.1650) Imaging systems : Coherence imaging
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(120.6650) Instrumentation, measurement, and metrology : Surface measurements, figure
(140.2010) Lasers and laser optics : Diode laser arrays

Original Manuscript: January 3, 2000
Revised Manuscript: October 6, 2000
Published: February 20, 2001

Andrei V. Zvyagin, Michael G. Garcia-Webb, and David D. Sampson, "Semiconductor line source for low-coherence interferometry," Appl. Opt. 40, 913-915 (2001)

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