Reflective Light Modulator Based on ε-GaSe Crystal
Applied Optics, Vol. 41, Issue 1, pp. 148-153 (2002)
http://dx.doi.org/10.1364/AO.41.000148
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Abstract
We report the results of investigating a low-voltage, polarization-insensitive, reflective-type modulator based on an ε-GaSe crystal and operated at the 1.960-eV line of a He–Ne laser. We demonstrate that the modulation in an Al–ε-GaSe–Cu device results mainly from the Franz–Keldysh effect. Relatively high speed and low operating voltage could make these modulators with Schottky-barrier contacts attractive devices in the red range of the spectrum.
© 2002 Optical Society of America
OCIS Codes
(120.7000) Instrumentation, measurement, and metrology : Transmission
(130.5990) Integrated optics : Semiconductors
(230.2090) Optical devices : Electro-optical devices
(240.0310) Optics at surfaces : Thin films
(270.6620) Quantum optics : Strong-field processes
(300.1030) Spectroscopy : Absorption
Citation
Kerim Allakhverdiev, Namik Ismailov, Zehra Salaeva, Faik Mikailov, Aydin Gulubayov, Tofik Mamedov, and Sardar Babaev, "Reflective Light Modulator Based on ε-GaSe Crystal," Appl. Opt. 41, 148-153 (2002)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-41-1-148
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