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Applied Optics

Applied Optics


  • Vol. 41, Iss. 1 — Jan. 1, 2002
  • pp: 218–224

Determination of Thickness, Refractive Index, and Thickness Irregularity for Semiconductor Thin Films from Transmission Spectra

Akram K. S. Aqili and Asghari Maqsood  »View Author Affiliations

Applied Optics, Vol. 41, Issue 1, pp. 218-224 (2002)

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A simplified theoretical model has been proposed to predict optical parameters such as thickness, thickness irregularity, refractive index, and extinction coefficient from transmission spectra. The proposed formula has been solved for thickness and thickness irregularity in the transparent region, and then the refractive index is calculated for the entire spectral region by use of the interference fringes order. The extinction coefficient is then calculated with the exact formula in the transparent region, and an appropriate model for the refractive index is used to solve for the extinction coefficient in the absorption region (where the interference fringes disappear). The proposed model is tested with the theoretical predicted data as well as experimental data. The calculation shows that the approximations used for solving a multiparameter nonlinear equation result in no significant errors.

© 2002 Optical Society of America

OCIS Codes
(130.5990) Integrated optics : Semiconductors
(310.0310) Thin films : Thin films
(310.6860) Thin films : Thin films, optical properties

Akram K. S. Aqili and Asghari Maqsood, "Determination of Thickness, Refractive Index, and Thickness Irregularity for Semiconductor Thin Films from Transmission Spectra," Appl. Opt. 41, 218-224 (2002)

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