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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 41, Iss. 20 — Jul. 10, 2002
  • pp: 4157–4161

High-contrast images of semiconductor sites via one-photon optical beam–induced current imaging and confocal reflectance microscopy

Vincent R. Daria, Jelda J. Miranda, and Caesar Saloma  »View Author Affiliations


Applied Optics, Vol. 41, Issue 20, pp. 4157-4161 (2002)
http://dx.doi.org/10.1364/AO.41.004157


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Abstract

We demonstrate a computationally efficient procedure for determining only the semiconductor sites in a confocal reflectance image of an integrated circuit. It utilizes a one-photon optical beam-induced current (1P-OBIC) and confocal reflectance images that are generated from the same focused excitation beam. A 1P-OBIC image is a two-dimensional map of the currents induced by the beam as it is scanned across the circuit surface. A 1P-OBIC is produced by an illuminated semiconductor material if the excitation photon energy exceeds the bandgap. The 1P-OBIC image has no vertical resolution because the 1P-OBIC is linear with the excitation beam intensity. The exclusive high-contrast image of semiconductor sites is generated by the product of the 1P-OBIC image and the confocal image. High-contrast images of the metal sites are also obtained by the product of the complementary OBIC image and the same confocal image.

© 2002 Optical Society of America

OCIS Codes
(100.2980) Image processing : Image enhancement
(110.4190) Imaging systems : Multiple imaging
(180.1790) Microscopy : Confocal microscopy

History
Original Manuscript: December 10, 2001
Revised Manuscript: March 26, 2002
Published: July 10, 2002

Citation
Vincent R. Daria, Jelda J. Miranda, and Caesar Saloma, "High-contrast images of semiconductor sites via one-photon optical beam–induced current imaging and confocal reflectance microscopy," Appl. Opt. 41, 4157-4161 (2002)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-41-20-4157

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