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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 41, Iss. 24 — Aug. 20, 2002
  • pp: 5179–5184

Photothermal deflection studies of GaAs epitaxial layers

Nibu A. George, C. P. G. Vallabhan, V. P. N. Nampoori, and P. Radhakrishnan  »View Author Affiliations


Applied Optics, Vol. 41, Issue 24, pp. 5179-5184 (2002)
http://dx.doi.org/10.1364/AO.41.005179


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Abstract

Photothermal beam deflection studies were carried out with GaAs epitaxial double layers grown on semi-insulating GaAs substrates. The impurity densities in thin epitaxial layers were found to influence the effective thermal diffusivity of the entire structure.

© 2002 Optical Society of America

OCIS Codes
(120.4290) Instrumentation, measurement, and metrology : Nondestructive testing
(160.6000) Materials : Semiconductor materials
(300.6430) Spectroscopy : Spectroscopy, photothermal
(310.6870) Thin films : Thin films, other properties

History
Original Manuscript: December 5, 2001
Revised Manuscript: March 27, 2002
Published: August 20, 2002

Citation
Nibu A. George, C. P. G. Vallabhan, V. P. N. Nampoori, and P. Radhakrishnan, "Photothermal deflection studies of GaAs epitaxial layers," Appl. Opt. 41, 5179-5184 (2002)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-41-24-5179

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