Photothermal Deflection Studies of GaAs Epitaxial Layers
Applied Optics, Vol. 41, Issue 24, pp. 5179-5184 (2002)
http://dx.doi.org/10.1364/AO.41.005179
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Abstract
Photothermal beam deflection studies were carried out with GaAs epitaxial double layers grown on semi-insulating GaAs substrates. The impurity densities in thin epitaxial layers were found to influence the effective thermal diffusivity of the entire structure.
© 2002 Optical Society of America
[Optical Society of America ]
OCIS Codes
(120.4290) Instrumentation, measurement, and metrology : Nondestructive testing
(160.6000) Materials : Semiconductor materials
(300.6430) Spectroscopy : Spectroscopy, photothermal
(310.6870) Thin films : Thin films, other properties
Citation
Nibu A. George, C. P. G. Vallabhan, V. P. N. Nampoori, and P. Radhakrishnan, "Photothermal Deflection Studies of GaAs Epitaxial Layers," Appl. Opt. 41, 5179-5184 (2002)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-41-24-5179
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