OSA's Digital Library

Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 42, Iss. 12 — Apr. 20, 2003
  • pp: 2110–2118

Antireflection-coated blue GaN laser diodes in an external cavity and Doppler-free indium absorption spectroscopy

Lars Hildebrandt, Richard Knispel, Sandra Stry, Joachim R. Sacher, and Frank Schael  »View Author Affiliations


Applied Optics, Vol. 42, Issue 12, pp. 2110-2118 (2003)
http://dx.doi.org/10.1364/AO.42.002110


View Full Text Article

Enhanced HTML    Acrobat PDF (657 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

Commercially available GaN-based laser diodes were antireflection coated in our laboratory and operated in an external cavity in a Littrow configuration. A total tuning range of typically 4 nm and an optical output power of up to 30 mW were observed after optimization of the external cavity. The linewidth was measured with a heterodyne technique, and 0.8 MHz at a sweep time of 50 ms was obtained. The mode-hop-free tuning range was more than 50 GHz. We demonstrated the performance of the laser by detecting the saturated absorption spectrum of atomic indium at 410 nm, allowing observation of well-resolved Lamb dips.

© 2003 Optical Society of America

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.3600) Lasers and laser optics : Lasers, tunable
(300.1030) Spectroscopy : Absorption
(300.6260) Spectroscopy : Spectroscopy, diode lasers

History
Original Manuscript: May 20, 2002
Revised Manuscript: July 15, 2002
Published: April 20, 2003

Citation
Lars Hildebrandt, Richard Knispel, Sandra Stry, Joachim R. Sacher, and Frank Schael, "Antireflection-coated blue GaN laser diodes in an external cavity and Doppler-free indium absorption spectroscopy," Appl. Opt. 42, 2110-2118 (2003)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-42-12-2110


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, R. O. Carlson, “Coherent light emission from GaAs Junctions,” Phys. Rev. Lett. 9, 366–368 (1962). [CrossRef]
  2. M. I. Nathan, W. P. Dumke, G. Burns, F. H. Dill, G. J. Lasher, “Stimulated emission of radiation from GaAs p-junctions,” Appl. Phys. Lett. 1, 62 (1962). [CrossRef]
  3. T. M. Quist, R. H. Rediker, R. J. Keyes, W. E. Krag, B. Lax, A. L. McWhorter, H. J. Zeigler, “Semiconductor maser of GaAs,” Appl. Phys. Lett. 1, 91–92 (1962). [CrossRef]
  4. C. E. Wieman, L. Hollberg, “Using diode lasers for atomic physics,” Rev. Sci. Instrum. 62, 1–20 (1991). [CrossRef]
  5. S. Nakamura, S. Pearton, G. Fasol, “The blue laser diode—the complete story,” 2nd ed. (Springer, Berlin, 2000). [CrossRef]
  6. See http://www.nichia.co.jp .
  7. J. W. Crowe, R. M. Craig, “GaAs laser linewidth measurements by heterodyne detection,” Appl. Phys. Lett. 5, 72–73 (1964). [CrossRef]
  8. L. Ricci, M. Weidemuller, T. Esslinger, A. Hemmerich, C. Zimmermann, V. Vuletic, W. Koenig, T. W. Haensch, “A compact grating-stabilized diode laser system for atomic physics,” Opt. Commun. 117, 541–549 (1995). [CrossRef]
  9. See http://www.sacher-laser.com .
  10. M. G. Littman, H. J. Metcalf, “Spectrally narrow pulsed dye laser without beam expander,” Appl. Opt. 17, 2224–2227 (1978). [CrossRef] [PubMed]
  11. J. Struckmeyer, A. Euteneuer, B. Smarsly, M. Breede, M. Born, M. Hofmann, L. Hildebrandt, J. Sacher, “Electronically tunable external-cavity laser diode,” Opt. Lett. 24, 1573–1574 (1999). [CrossRef]
  12. M. Laschek, M. Reich, D. Wandt, W. Arens, C. Fallnich, H. Welling, “External cavity diode laser with electrooptic wavelength tuning,” in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optical Society of America, Washington D.C., 1999), pp. 141–142.
  13. D. Wandt, C. Fallnich, H. Welling, “Laserdioden mit externen Resonatoren fuer die Gasanalyse,” tm-Technisches Messen 68, 365–373 (2001). [CrossRef]
  14. L. Hildebrandt, R. Knispel, J. Sacher, “Kompakte External Cavity Dioden Laser fuer die industrielle Messtechnik,” tm-Technisches Messen 68, 374–379 (2001). [CrossRef]
  15. D. J. Lonsdale, A. P. Willis, T. A. King, “Extended tuning and single-mode operation of an anti-reflection-coated InGaN violet laser diode in a Littrow cavity,” Meas. Sci. Technol. 13, 488–493 (2002).
  16. J. Sacher, “Coating process and apparatus,” U.S. patent6,297,066 (2October2001).
  17. I. P. Kaminow, G. Eisenstein, L. W. Stulz, “Measurement of the modal reflectivity of an antireflection coating on a superluminescent diode,” IEEE J. Quantum Electron. QE-19, 493–495 (1983). [CrossRef]
  18. J. Sacher, D. Baums, P. Panknin, W. Elsaesser, E. O. Goebel, “Intensity instabilities of semiconductor lasers under current modulation, external light injection, and delayed feedback,” Phys. Rev. A 45, 1893–1905 (1992). [CrossRef] [PubMed]
  19. W. W. Chow, S. Koch, M. Sargent, Semiconductor-Laser Physics (Springer, Berlin, 1994). [CrossRef]
  20. H. Leinen, D. Glaessner, H. Metcalf, R. Wynands, D. Haubrich, D. Meschede, “GaN blue diode laser: a spectroscopist’s view,” Appl. Phys. B 70, 567–571 (2000). [CrossRef]
  21. G. P. Agrawal, “Line narrowing in a single-mode injection laser due to external optical feedback,” IEEE J. Quantum Electron. QE-20, 468–471 (1984). [CrossRef]
  22. P. Glas, A. Klehr, R. Mueller, “Transient and stationary properties in bistable operation of a GaAs laser coupled to an external resonator,” Opt. Commun. 44, 196–200 (1983). [CrossRef]
  23. J. Mork, B. Tromborg, J. Mark, “Chaos in semiconductor lasers with optical feedback: theory and experiment,” IEEE J. Quantum Electron. QE-28, 93–108 (1992). [CrossRef]
  24. L. Hildebrandt, J. Sacher, “A comparison of AR-coated diode lasers and non AR-coated diode lasers, both within an identical external cavity,” http://data.sacher.de/arc/arbeneft.pdf .
  25. F. Favre, D. Le Guen, “82 nm of continuous tunability for an external cavity semiconductor laser,” Electron. Lett. 27, 183–184 (1991). [CrossRef]
  26. C. H. Henry, “Theory of the linewidth of semiconductor laser,” IEEE J. Quantum Electron. QE-18, 259–264 (1982). [CrossRef]
  27. C. H. Henry, “Theory of the phase noise and power spectrum of a single mode injection laser,” IEEE J. Quantum Electron. QE-19, 1391–1397 (1983). [CrossRef]
  28. W. Demtroeder, Laser Spectroscopy, 2nd ed. (Springer, Berlin, 1998).
  29. U. Tanaka, T. Yabuzaki, “Frequency stabilisation of diode laser using external cavity and Doppler-free atomic spectra,” Jpn. J. Appl. Phys. 33, 1614–1622 (1994). [CrossRef]
  30. A. M. Akulshin, V. A. Sautenkov, V. L. Velchansky, A. S. Zibrov, M. V. Zverkov, “Power broadening of saturation absorption resonance on the D2 line of rubidium,” Opt. Commun. 77, 295–298 (1990). [CrossRef]
  31. S. Nakayama, “Theoretical analysis of Rb and Cs D2 lines in Doppler-free spectroscopic techniques with optical pumping,” Jpn. J. Appl. Phys. 24, 1–7 (1985). [CrossRef]
  32. K. B. MacAdam, A. Steinbach, C. Wieman, “A narrow-band tunable diode laser system with grating feedback, and a saturated absorption spectrometer for Cs and Rb,” Am. J. Phys. 60, 1098–1111 (1992). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited