Anisotropic in-plane strain arises in quantum-well systems by design or unintentionally. We propose two methods of measuring the in-plane strain anisotropy based on the optical polarization anisotropy that arises with anisotropic in-plane strain. One method uses purely optical means to determine the strain anisotropy in quantum wells under a compressive strain that is spatially varying. A second approach, applicable to quantum wells under tensile strain or with strain that does not vary with position, requires the application of a uniaxial in-plane stress. Although the second method is experimentally more difficult, it allows analysis of systems that would otherwise be inaccessible.
© 2003 Optical Society of America
(130.5990) Integrated optics : Semiconductors
(160.2100) Materials : Electro-optical materials
(160.6000) Materials : Semiconductor materials
(300.6470) Spectroscopy : Spectroscopy, semiconductors
Mark L. Biermann, James Diaz-Barriga, and William S. Rabinovich, "Optical Approach for Determining Strain Anisotropy in Quantum Wells," Appl. Opt. 42, 3558-3563 (2003)