We present a new model to analyze the spatial characteristics of the output beam of conventional (straight-stripe) and tapered superluminescent light-emitting diodes. The device model includes both spontaneous and stimulated emission processes as well as a nonuniform carrier density distribution to correctly represent current spreading and carrier diffusion effects. Near- and far-field intensity profiles computed with this model are accurately verified over a wide range of injection currents by comparisons with experimental results measured from in-house fabricated devices.
© 2003 Optical Society of America
Frederica Causa and Jayanta Sarma, "Realistic Model for the Output Beam Profile of Stripe and Tapered Superluminescent Light-Emitting Diodes," Appl. Opt. 42, 4341-4348 (2003)