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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 42, Iss. 22 — Aug. 1, 2003
  • pp: 4594–4598

Photosensitive GeO2—SiO2 films for ultraviolet laser writing of channel waveguides and Bragg gratings with Cr-loaded waveguide structure

Masahide Takahashi, Akifumi Sakoh, Kentaro Ichii, Yomei Tokuda, Toshinobu Yoko, and Junji Nishii  »View Author Affiliations


Applied Optics, Vol. 42, Issue 22, pp. 4594-4598 (2003)
http://dx.doi.org/10.1364/AO.42.004594


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Abstract

Irradiation with intense ultraviolet laser pulses induced a large refractive-index change in 30GeO2—70SiO2 waveguide-grade thin films prepared by the plasma-enhanced chemical vapor deposition method, which contained a large amount of photoactive Ge2+ defects. The maximum index change in the as-deposited films by KrF and XeF excimer laser irradiation was estimated to be 1.2 × 10-3 and 0.28 × 10-3, respectively. These results clearly indicate that the photorefractivity of GeO2—SiO2 glasses is due to a Ge2+ defect in origin. The channel waveguide and the planar Bragg gratings were directly written in the photoactive Ge2+-enriched GeO2—SiO2 thin films by pulsed ultraviolet laser irradiation with a Cr-metal-loaded-type waveguide structure.

© 2003 Optical Society of America

OCIS Codes
(050.2770) Diffraction and gratings : Gratings
(160.5320) Materials : Photorefractive materials
(160.6030) Materials : Silica
(230.7390) Optical devices : Waveguides, planar
(310.1860) Thin films : Deposition and fabrication

History
Original Manuscript: December 5, 2002
Revised Manuscript: April 8, 2003
Published: August 1, 2003

Citation
Masahide Takahashi, Akifumi Sakoh, Kentaro Ichii, Yomei Tokuda, Toshinobu Yoko, and Junji Nishii, "Photosensitive GeO2—SiO2 films for ultraviolet laser writing of channel waveguides and Bragg gratings with Cr-loaded waveguide structure," Appl. Opt. 42, 4594-4598 (2003)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-42-22-4594

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