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Applied Optics

Applied Optics


  • Vol. 42, Iss. 30 — Oct. 20, 2003
  • pp: 6001–6005

Imaging of the expansion of femtosecond-laser-produced silicon plasma atoms by off-resonant planar laser-induced fluorescence

Ota Samek, Franz Leis, Vanja Margetic, Radomir Malina, Kay Niemax, and Roland Hergenröder  »View Author Affiliations

Applied Optics, Vol. 42, Issue 30, pp. 6001-6005 (2003)

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Planar laser-induced fluorescence measurements were used to investigate the expansion dynamics of a femtosecond laser-induced plasma. Temporally and spatially resolved measurements were performed to monitor the atoms that were ablated from a silicon target. A dye laser (λ = 288.16 nm) was used to excite fluorescence signals. The radiation of an off-resonant transition (Si 390.55 nm) was observed at different distances from the target surface. This allowed easy detection of the ablated Si atoms without problems caused by scattered laser light. Abel inversion was applied to obtain the radial distribution of the Si atoms. The atom distribution in the plasma shows some peculiarities, depending on the crater depth.

© 2003 Optical Society of America

OCIS Codes
(300.2530) Spectroscopy : Fluorescence, laser-induced
(320.7090) Ultrafast optics : Ultrafast lasers

Original Manuscript: January 20, 2003
Revised Manuscript: June 18, 2003
Published: October 20, 2003

Ota Samek, Franz Leis, Vanja Margetic, Radomir Malina, Kay Niemax, and Roland Hergenröder, "Imaging of the expansion of femtosecond-laser-produced silicon plasma atoms by off-resonant planar laser-induced fluorescence," Appl. Opt. 42, 6001-6005 (2003)

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