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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 43, Iss. 1 — Jan. 1, 2004
  • pp: 160–166

Photoelastic effect from die bonding of diode lasers

Mark A. Fritz and Daniel T. Cassidy  »View Author Affiliations


Applied Optics, Vol. 43, Issue 1, pp. 160-166 (2004)
http://dx.doi.org/10.1364/AO.43.000160


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Abstract

The effect of strain induced from die bonding on the optical guiding of a ridge-waveguide laser is examined. Measurements of the strain in a p-down-mounted InP-based diode laser with fits to polarization-resolved photoluminescence are used to compute the resulting photoelastic effect in a ridge waveguide. The strain is found to alter the refractive indices in the material sufficiently in the waveguide to change the mode and reduce the optical confinement. In the far field the beam is calculated to be made narrow and asymmetric by the die-bonding strain.

© 2004 Optical Society of America

OCIS Codes
(120.4290) Instrumentation, measurement, and metrology : Nondestructive testing
(140.2020) Lasers and laser optics : Diode lasers
(160.4760) Materials : Optical properties
(230.7370) Optical devices : Waveguides

History
Original Manuscript: June 12, 2003
Revised Manuscript: September 9, 2003
Published: January 1, 2004

Citation
Mark A. Fritz and Daniel T. Cassidy, "Photoelastic effect from die bonding of diode lasers," Appl. Opt. 43, 160-166 (2004)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-43-1-160

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