Refractive-Index Measurements of Zinc Germanium Diphosphide at 300 and 77 K by Use of a Modified Michelson Interferometer
Applied Optics, Vol. 43, Issue 10, pp. 2054-2058 (2004)
http://dx.doi.org/10.1364/AO.43.002054
Acrobat PDF (159 KB)
Abstract
A method to determine the absolute refractive index of materials available in the shape of flat wafers with parallel sides by using interferometric techniques is presented. With this method, nondestructive, sample-specific measurements can be made. The method is tested by using silicon, germanium and zinc selenide, and measurements for both the ordinary and extraordinary axes of ZnGeP2 for temperatures of 300 and 77 K are reported.
© 2004 Optical Society of America
OCIS Codes
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(120.4290) Instrumentation, measurement, and metrology : Nondestructive testing
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
Citation
Glen D. Gillen and Shekhar Guha, "Refractive-Index Measurements of Zinc Germanium Diphosphide at 300 and 77 K by Use of a Modified Michelson Interferometer," Appl. Opt. 43, 2054-2058 (2004)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-43-10-2054
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Article level metrics are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
Related Journal Articles 
- Dispersion Measurements of Water with White-Light Interferometry (AO)
- Low-coherence tandem interferometer for measurement of group refractive index without knowledge of the thickness of the test sample (OL)
- Use of Michelson and Fabry-Perot interferometry for independent determination of the refractive index and physical thickness of wafers (AO)
- Temperature-dependent refractive index measurements of wafer-shaped InAs and InSb (AO)
- Reflectometry-based wavelength scanning interferometry for thickness measurements of very thin wafers (OE)
Related Conference Papers
- Semiconductor quantum computer design with 100 nm separation of nuclear-spin qubits
- Semiconductor quantum computer design with 100 nm separation of nuclear-spin qubits
- Microphotoluminescence Around 1.5 µm from a Single InAs/InP(001) Quantum Dot Grown by MOVPE
- Growth and Characteristics of Epitaxial Nanowires on a Lattice-Mismatched Substrate
- Theory of Quantum Dot Lasers
- Structural and Optical Studies of In(Ga)P Nanowires Grown on Si(111) Substrates by MOCVD
« Previous Article | Next Article »
OSA is a member of 