A method to determine the absolute refractive index of materials available in the shape of flat wafers with parallel sides by using interferometric techniques is presented. With this method, nondestructive, sample-specific measurements can be made. The method is tested by using silicon, germanium and zinc selenide, and measurements for both the ordinary and extraordinary axes of ZnGeP<sub>2</sub> for temperatures of 300 and 77 K are reported.
© 2004 Optical Society of America
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(120.4290) Instrumentation, measurement, and metrology : Nondestructive testing
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
Glen D. Gillen and Shekhar Guha, "Refractive-Index Measurements of Zinc Germanium Diphosphide at 300 and 77 K by Use of a Modified Michelson Interferometer," Appl. Opt. 43, 2054-2058 (2004)