Far-Field Expression of a High-Power Laser Diode
Applied Optics, Vol. 43, Issue 27, pp. 5168-5172 (2004)
http://dx.doi.org/10.1364/AO.43.005168
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Abstract
Based on the off-axis theory, a model for describing the far field with the bipeak structure of a high-power laser diode is proposed. The computed results agree well with the measured far-field data of practical devices. A minimum overall error criterion for fitting the theoretical model with the measured data is also given. The results show that the overall error of this model is less than 5% for popular laser diodes. This model has a simple mathematical structure and can be easily used to design the beam-shaping system and to analyze the propagation properties when the laser beam passes through an optic system.
© 2004 Optical Society of America
OCIS Codes
(140.2010) Lasers and laser optics : Diode laser arrays
(140.2020) Lasers and laser optics : Diode lasers
(140.3300) Lasers and laser optics : Laser beam shaping
(350.5500) Other areas of optics : Propagation
Citation
Xiaodong Zeng, Zhejun Feng, and Yuying An, "Far-Field Expression of a High-Power Laser Diode," Appl. Opt. 43, 5168-5172 (2004)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-43-27-5168
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