Enhanced Birefringence in Vacuum Evaporated Silicon Thin Films
Applied Optics, Vol. 43, Issue 28, pp. 5343-5349 (2004)
http://dx.doi.org/10.1364/AO.43.005343
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Abstract
We report an experimental study of enhanced optical birefringence in silicon thin films on glass substrates. Form anisotropy is introduced as an atomic-scale morphological structure through dynamic control of growth geometry. The resulting birefringence is large compared with naturally anisotropic crystals and is comparable to two-dimensional photonic crystals. The films are fabricated with serial bideposition onto a substrate held at a fixed tilt angle relative to the impinging vapor. Films were analyzed by spectroscopic ellipsometry and scanning electron microscopy, the latter clearly revealing form anisotropy in a morphology of bunched columns perpendicular to the deposition plane with dimensions of hundreds of nanometers and smaller. The observed linear birefringence varies with wavelength and tilt angle, with a maximum of 0.4 at a 630-nm wavelength and 0.25 at 1500 nm.
© 2004 Optical Society of America
OCIS Codes
(160.1190) Materials : Anisotropic optical materials
(260.1440) Physical optics : Birefringence
(260.2130) Physical optics : Ellipsometry and polarimetry
(310.1860) Thin films : Deposition and fabrication
(310.6860) Thin films : Thin films, optical properties
Citation
Gisia Beydaghyan, Kate Kaminska, Tim Brown, and Kevin Robbie, "Enhanced Birefringence in Vacuum Evaporated Silicon Thin Films," Appl. Opt. 43, 5343-5349 (2004)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-43-28-5343
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