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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 43, Iss. 36 — Dec. 20, 2004
  • pp: 6545–6556

Repairing amplitude defects in multilayer-coated extreme-ultraviolet lithography reticles by use of a focused ion beam

Anton Barty, Stefan Hau-Riege, Dan Stearns, Miles Clift, Paul Mirkarimi, Eric Gullikson, Henry Chapman, and Don Sweeney  »View Author Affiliations


Applied Optics, Vol. 43, Issue 36, pp. 6545-6556 (2004)
http://dx.doi.org/10.1364/AO.43.006545


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Abstract

We present a method for repairing defects near the top surfaces of multilayer coatings in general and specifically on extreme-ultraviolet lithography mask blanks. Milling away the defect and a surrounding region of the multilayer by use of a focused ion beam can repair both the reflectivity and the phase of the reflected light in the vicinity of such a defect. We describe the conditions under which the repaired region will not itself be a defect and experimentally demonstrate the feasibility of this multilayer repair technique. The results described are also applicable to understanding and controlling the optical effects of ion-induced multilayer erosion.

© 2004 Optical Society of America

OCIS Codes
(110.3960) Imaging systems : Microlithography
(110.5220) Imaging systems : Photolithography
(160.4670) Materials : Optical materials
(220.3740) Optical design and fabrication : Lithography
(230.4170) Optical devices : Multilayers

History
Original Manuscript: March 16, 2004
Published: December 20, 2004

Citation
Anton Barty, Stefan Hau-Riege, Dan Stearns, Miles Clift, Paul Mirkarimi, Eric Gullikson, Henry Chapman, and Don Sweeney, "Repairing amplitude defects in multilayer-coated extreme-ultraviolet lithography reticles by use of a focused ion beam," Appl. Opt. 43, 6545-6556 (2004)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-43-36-6545


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References

  1. T. Liang, A. Stivers, R. Livengood, P.-Y. Yan, G. Zhang, F.-C. Lo, “Progress in EUV mask repair using a focussed ion beam,” J. Vac. Sci. Technol. B 18, 3216–3220 (2000). [CrossRef]
  2. P. B. Mirkarimi, D. G. Stearns, S. L. Baker, J. W. Elmer, D. W. Sweeney, E. M. Gullikson, “Methods for repairing Mo–Si multilayer thin film phase defects in reticles for extreme ultraviolet lithography,” J. Appl. Phys. 91, 81–89 (2002). [CrossRef]
  3. A. Barty, P. B. Mirkarimi, D. G. Stearns, D. Sweeney, H. N. Chapman, M. Clift, S. Hector, M. Yi, “EUVL mask blank repair,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 385–394 (2002). [CrossRef]
  4. S. Hau-Riege, A. Barty, P. B. Mirkarimi, D. G. Stearns, H. Chapman, D. Sweeney, M. Clift, E. Gullikson, M. Yi, “Defect repair for extreme ultraviolet lithography (EUVL) mask blanks,” in Emerging Lithographic Technologies VII, R. L. Engelstad, ed., Proc. SPIE5037, 331–338 (2003). [CrossRef]
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  7. D. G. Stearns, D. W. Sweeney, P. B. Mirkarimi, H. N. Chapman, “A method to repair localised amplitude defects in EUV lithography mask blanks,” U.S. patent application 20,030,006,214 (9January2003).
  8. E. M. Gullikson, C. Cerjan, D. G. Stearns, P. B. Mirkarimi, D. W. Sweeney, “A practical approach for modelling EUVL mask defects,” J. Vac. Sci. Technol. 20, 81–86 (2001).
  9. A. R. Stivers, E. Tejnil, “Dependence of mask defect printability and printability criteria on lithography process resolution,” in 21st Annual BACUS Symposium on Photomask Technology, G. T. Dao, B. J. Grenon, eds., Proc. SPIE4562, 122–129 (2002). [CrossRef]
  10. P. B. Mirkarimi, E. A. Spiller, D. G. Stearns, V. Sperry, S. L. Baker, “An ion-assisted Mo–Si deposition process for planarising reticle substrates for extreme ultraviolet lithography,” IEEE J. Quantum Electron. 37, 1514–1516 (2001). [CrossRef]
  11. P. B. Mirkarimi, E. Spiller, S. L. Baker, V. Sperry, D. G. Stearns, “Developing a viable multilayer coating process for EUVL reticles,” J. Microlithogr. Microfabr. Microsyst. 3, 139–145 (2004).
  12. D. G. Stearns, P. B. Mirkarimi, E. Spiller, “Localized defects in EUV multilayer coatings,” Thin Solid Films 46, 37–49 (2004). [CrossRef]

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