A crucial component of lithographic modeling is the resist. Resists typically used at extreme-ultraviolet (EUV) wavelengths are derivatives of deep-ultraviolet chemically amplified resists. Models that describe these resists are often very complicated and are dependent on a large number of free parameters. Point-spread-function-based resist modeling serves as a simple alternative. I show this type of modeling to be a viable technique at EUV wavelengths by directly comparing modeling results with a variety of printing metrics, including process windows and isodense bias.
© 2004 Optical Society of America
(110.4100) Imaging systems : Modulation transfer function
(110.5220) Imaging systems : Photolithography
(220.3740) Optical design and fabrication : Lithography
(310.3840) Thin films : Materials and process characterization
Patrick P. Naulleau, "Verification of Point-Spread-Function-Based Modeling of an Extreme-Ultraviolet Photoresist," Appl. Opt. 43, 788-792 (2004)