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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 43, Iss. 4 — Feb. 1, 2004
  • pp: 788–792

Verification of point-spread-function-based modeling of an extreme-ultraviolet photoresist

Patrick P. Naulleau  »View Author Affiliations


Applied Optics, Vol. 43, Issue 4, pp. 788-792 (2004)
http://dx.doi.org/10.1364/AO.43.000788


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Abstract

A crucial component of lithographic modeling is the resist. Resists typically used at extreme-ultraviolet (EUV) wavelengths are derivatives of deep-ultraviolet chemically amplified resists. Models that describe these resists are often very complicated and are dependent on a large number of free parameters. Point-spread-function-based resist modeling serves as a simple alternative. I show this type of modeling to be a viable technique at EUV wavelengths by directly comparing modeling results with a variety of printing metrics, including process windows and isodense bias.

© 2004 Optical Society of America

OCIS Codes
(110.4100) Imaging systems : Modulation transfer function
(110.5220) Imaging systems : Photolithography
(220.3740) Optical design and fabrication : Lithography
(310.3840) Thin films : Materials and process characterization

History
Original Manuscript: July 16, 2003
Revised Manuscript: October 7, 2003
Published: February 1, 2004

Citation
Patrick P. Naulleau, "Verification of point-spread-function-based modeling of an extreme-ultraviolet photoresist," Appl. Opt. 43, 788-792 (2004)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-43-4-788


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References

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