We studied two bidimensional square gratings of square holes formed in photoresist layers deposited on silicon wafers, both by classical spectroscopic ellipsometry (1.5–4.5-eV spectral range) at a constant incidence angle (70.7°) and by angle-resolved Mueller polarimetry at a constant wavelength (532 nm). The grating period was 1 μm in both directions, and the nominal hole sizes were 250 and 500 nm, respectively. The ellipsometric spectra were fitted by rigorous coupled-wave analysis simulations with two adjustable parameters, the resist layer thickness and the hole size. These parameters were found to be in good agreement with independent scanning electron microscopy measurements. The experimental angle-resolved Mueller spectra were remarkably well reproduced by the simulations, showing that angle-resolved Mueller polarimetry has a great potential for grating metrology applications.
© 2004 Optical Society of America
(120.2130) Instrumentation, measurement, and metrology : Ellipsometry and polarimetry
(120.3940) Instrumentation, measurement, and metrology : Metrology
(310.3840) Thin films : Materials and process characterization
Bernard Kaplan, Tatiana Novikova, Antonello De Martino, and Bernard Drévillon, "Characterization of Bidimensional Gratings by Spectroscopic Ellipsometry and Angle-Resolved Mueller Polarimetry," Appl. Opt. 43, 1233-1240 (2004)