The results of implanting silicon carbide with a 1-MeV proton beam at a dose of 1 × 1017 cm-2 are presented. Using high-resolution confocal Raman spectroscopy, we analyzed the depth profile of the implantation damage before and after thermal annealing. When it is applied to a high-refractive-index medium, such as SiC, this technique requires careful manipulation to ensure the correct interpretation of results. To this end we discuss a simple ray-tracking model that includes the effects of additional spherical aberration and of the Gaussian intensity profile of the excitation beam. In addition, infrared reflectance measurements show evidence of a well-defined step in the refractive-index profile at the expected implantation depth.
© 2004 Optical Society of America
Original Manuscript: March 11, 2003
Revised Manuscript: August 11, 2003
Published: February 20, 2004
Daniel J. Brink, Thibaut Maurice, Servane Blanque, H. Kunert, Jean Camassel, and Jordi Pascual, "Depth profiling of high-energy hydrogen-implanted 6H-SiC," Appl. Opt. 43, 1275-1280 (2004)