A thin layer of a SU-8 submicrometer pattern produced by holographic lithography was directly used as the dry-etching mask in a chemically assisted ion-beam-etching system. With optimized etching parameters, etching selectivity of 7:1 was achieved together with a smooth vertical profile. As an application, a half-wavelength retardation plate for a 1.55-µm wavelength was produced and evaluated.
© 2005 Optical Society of America
(090.0090) Holography : Holography
(230.3990) Optical devices : Micro-optical devices
(230.4000) Optical devices : Microstructure fabrication
(230.5440) Optical devices : Polarization-selective devices
Lin Pang, Maziar Nezhad, Uriel Levy, Chia-Ho Tsai, and Yeshaiahu Fainman, "Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask," Appl. Opt. 44, 2377-2381 (2005)