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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 44, Iss. 2 — Jan. 10, 2005
  • pp: 183–189

Effect of mask-roughness on printed contact-size variation in extreme-ultraviolet lithography

Patrick P. Naulleau  »View Author Affiliations


Applied Optics, Vol. 44, Issue 2, pp. 183-189 (2005)
http://dx.doi.org/10.1364/AO.44.000183


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Abstract

Relying on reflective mask technology, extreme-ultraviolet (EUV) lithography is particularly vulnerable to mask substrate roughness. Previous research has shown mask roughness to play a significant role in printed line-edge roughness (LER). Here the analysis of mask-roughness effects is extended to printed contact-size variations. Unlike LER, illumination partial coherence is found to have little affect on the results for contacts that are near the diffraction limit. Analysis shows that, given the current state-of-the-art EUV mask, mask roughness has a significant effect on the process window for small contacts. The analysis also shows that a significant portion of the contact-size variation observed in recent 0.1-numerical-aperture EUV exposures can be attributed to the mask-roughness effect studied here.

© 2005 Optical Society of America

OCIS Codes
(030.5770) Coherence and statistical optics : Roughness
(030.6140) Coherence and statistical optics : Speckle
(110.3960) Imaging systems : Microlithography
(110.4980) Imaging systems : Partial coherence in imaging
(260.7200) Physical optics : Ultraviolet, extreme

History
Original Manuscript: July 28, 2004
Revised Manuscript: September 20, 2004
Manuscript Accepted: September 22, 2004
Published: January 10, 2005

Citation
Patrick P. Naulleau, "Effect of mask-roughness on printed contact-size variation in extreme-ultraviolet lithography," Appl. Opt. 44, 183-189 (2005)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-44-2-183

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