Polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (ICP) technology, and it usually prevents further etching. We report an optimized etching condition under which no polymer deposition will occur for etching fused silica with ICP technology. Under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. Etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. Results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well.
© 2005 Optical Society of America
Original Manuscript: September 16, 2004
Revised Manuscript: February 27, 2005
Manuscript Accepted: March 7, 2005
Published: July 20, 2005
Shunquan Wang, Changhe Zhou, Huayi Ru, and Yanyan Zhang, "Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology," Appl. Opt. 44, 4429-4434 (2005)