Resonant-cavity-enhanced p-i-n photodiode with a broad quantum-efficiency spectrum by use of an anomalous-dispersion mirror
Applied Optics, Vol. 44, Issue 29, pp. 6131-6140 (2005)
http://dx.doi.org/10.1364/AO.44.006131
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Abstract
A resonant-cavity-enhanced photodiode with broad filter transmittance and high quantum efficiency was numerically designed and analyzed, fabricated, and validated experimentally. We show theoretically that the quantum-efficiency spectrum broadens because of anomalous dispersion of the reflection phase of a mirror in the device and describe conditions that allow maximal flatness of the transmitted spectrum to be achieved. To demonstrate the concepts we design, fabricate, and characterize a backilluminated In_0.47 Ga_0.53 As-based p-i-n photodiode upon a InP substrate. Experimental measurements of the fabricated devices demonstrate a peak quantum efficiency of 0.80 at 1550 nm and a FWHM of transmittance of 35.96 nm.
© 2005 Optical Society of America
OCIS Codes
(040.5160) Detectors : Photodetectors
(230.5160) Optical devices : Photodetectors
(230.5170) Optical devices : Photodiodes
(230.5750) Optical devices : Resonators
(310.1620) Thin films : Interference coatings
ToC Category:
Optical Devices
Citation
Chyong-Hua Chen, Kevin Tetz, and Yeshaiahu Fainman, "Resonant-cavity-enhanced p-i-n photodiode with a broad quantum-efficiency spectrum by use of an anomalous-dispersion mirror," Appl. Opt. 44, 6131-6140 (2005)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-44-29-6131
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