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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Glenn D. Boreman
  • Vol. 44, Iss. 29 — Oct. 10, 2005
  • pp: 6186–6192

Effect of high-energy electron-beam irradiation on the optical properties of ion-beam-sputtered silicon oxynitride thin films

Shivaprasad Karanth, Ganesh H. Shanbhogue, and C. L. Nagendra  »View Author Affiliations


Applied Optics, Vol. 44, Issue 29, pp. 6186-6192 (2005)
http://dx.doi.org/10.1364/AO.44.006186


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Abstract

Silicon oxynitride thin films are prepared by ion-beam sputtering, and the optical properties and surface chemical composition are studied by spectrophotometric and x-ray photoelectron spectroscopy, respectively. It is seen that the films sputtered by use of nitrogen alone as the sputtering species from a silicon nitride target are completely transparent (k<0.005) and have a refractive-index dispersion from 1.85 to 1.71 over the visible and near-infrared spectral regions, and the films show distinct spectral lines that are due to silicon, Si(2s), nitrogen, N(1s), and oxygen, O(1s). Sputter deposition of argon and of argon and nitrogen produces silicon-rich silicon oxynitride films that are absorbent and have high refractive indices. These films have a direct electronic transition, with a threshold energy of 1.75 eV. Electron irradiation transforms optically transparent silicon oxynitride films into silicon-rich silicon oxynitride films that have higher refractive indices and are optically absorbing owing to the presence of nonsaturated silicon in the irradiated films. The degradation in current responsivity of silicon photodetectors, under electron irradiation, is within 3% over the wavelength region from 450 to 750 nm, which is entirely due to the degradation of optical properties of silicon oxynitride antireflection coatings.

© 2005 Optical Society of America

OCIS Codes
(040.6040) Detectors : Silicon
(310.1210) Thin films : Antireflection coatings
(310.1860) Thin films : Deposition and fabrication
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Thin Films

Citation
Shivaprasad Karanth, Ganesh H. Shanbhogue, and C. L. Nagendra, "Effect of high-energy electron-beam irradiation on the optical properties of ion-beam-sputtered silicon oxynitride thin films," Appl. Opt. 44, 6186-6192 (2005)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-44-29-6186


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References

  1. H. Kato, N. Kashio, Y. Okhi, K. S. Seol, and T. Noma, "Band tail photoluminescence in hydrogenated amorphous silicon oxy-nitride and silicon nitride films," J. Appl. Phys. 93, 239-244 (2003). [CrossRef]
  2. S. Hasegawa, S. Sakamori, M. Futatsudera, T. Inokuma, and Y. Kurata, "Structure of defects in silicon oxy-nitride films," J. Appl. Phys. 89, 2598-2605 (2001). [CrossRef]
  3. T. S. Eriksson and C. G. Granquist, "Infrared optical properties of silicon oxynitride films: experimental data and theoretical interpretation," J. Appl. Phys. 60, 2081-2090 (1986). [CrossRef]
  4. R. P. Netterfield, P. J. Martin, and W. G. Sainty, "Synthesis of silicon nitride and silicon oxide films by ion-assisted deposition," Appl. Opt. 25, 3808-3809 (1986).
  5. B. G. Bovard, J. Ranm, R. Hora, and F. Hanselmann, "Silicon nitride thin films by low-voltage ion plating," Appl. Opt. 28, 4436-4441 (1986).
  6. K. J. Reeson, P. L. F. Hemment, C. D. Meekison, C. D. Marsh, G. R. Booker, R. J. Chater, J. A. Kilner, and J. Davis, "Buried layers of silicon oxy-nitride by ion beam synthesis," Nucl. Instrum. Methods Phys. Res. B 52, 427-432 (1988). [CrossRef]
  7. M. F. Lambrinos, R. Valzadeh, and J. S. Colligon, "Effect of bombardment on optical properties during the deposition of silicon nitride by reactive ion-beam sputtering," Appl. Opt. 35, 3620-3625 (1996).
  8. E. Rille and M. Huter, "Optical properties of Si3N4 thin films produced by reactive dc-magnetron sputtering," in Optical Interference Coatings, F. Abeles, ed., Proc. SPIE 2253, 1338-1342 (1999). [CrossRef]
  9. R.-Y. Tsai, L.-C. Kuo, and F. C. Ho, "Amorphous Si and SiN films preparation by a plasma-enhanced chemical vapor deposition process as optical coating materials," Appl. Opt. 32, 5561-5566 (1993).
  10. M. Ida, P. Chaton, and B. Rafin, "Control of silicon oxynitrides refractive index by reactive assisted ion beam sputter deposition," in Optical Interference Coatings, F. Abeles, ed., Proc. SPIE 2253, 404-423 (1999). [CrossRef]
  11. Y. Wang, X. Cheng, Z. Lin, C. Zhang, H. Xiao, and S. Zou, "A study of silicon oxy-nitride film prepared by ion beam assisted deposition," Mater. Lett. 58, 2261-2265 (2004). [CrossRef]
  12. H. G. Shanbhogue, C. L. Nagendra, M. N. Annapurna, S. Ajith Kumar, and G. K. M. Thutupalli, "Multilayer antireflection coatings for the visible and near-infrared regions," Appl. Opt. 36, 6339-6351 (1997).
  13. C. L. Nagendra and G. K. M. Thutupalli, "Optical constants of infrared (IR) materials in the IR region," J. Spacecraft Technol. 2, 7-17 (1992).
  14. H. Tsubomura and H. Kobayashi, "Solar cells," Crit. Rev. Solid State Mat. Sci. 18, 261-326 (1991).
  15. L. D. Partain, Solar Cells and Their Applications (Wiley, 1995), p. 99.
  16. C.-C. Lee, H.-L. Chen, J.-C. Hsu, and C.-L. Tien, "Interference coatings based on synthesized silicon nitride," Appl. Opt. 38, 2078-2081 (1999).
  17. E. Ritter, Dielectric Materials for Optical Applications, Vol. 8 of Physics of Thin Films, G. Hass, M. H. Francombe, and R. W. Hoffman, eds. (Academic, 1975), p. 1.
  18. K. H. Guenther, "Physical and chemical aspects in the application of thin films on optical elements," Appl. Opt. 23, 3612-3632 (1984).
  19. J. Kanicki, W. L. Warren, C. H. Seager, M. S. Crowder, and P. M. Lenahan, "Microscopic origin of the light-induced defects in hydrogenated nitrogen rich amorphous silicon nitride films," J. Noncryst. Solids 137 & 138, 291-294 (1991). [CrossRef]
  20. J. L. Bischoff, F. Lutz, L. Kubler, and D. Bolomont, "Heterogeneous Si3N4 growth during SiNx film deposition and thermal nitridation of Si(100): an x-ray photoemission spectroscopy study," Thin Solid Films 187, 101-109 (1990). [CrossRef]
  21. S. Hasegawa, T. Tsukao, and P. C. Zalm, "Bonding and electronic structures of amorphous SiNx:H," J. Appl. Phys. 61, 2916-2920 (1987). [CrossRef]
  22. D. Briggs and M. P. Seah, eds., Practical Surface Analysis of Auger and X-Ray Photoelectron Spectroscopy (Wiley, 1983).
  23. O. S. Heavens, Measurement of Optical Constants of Thin Films, Vol. 2 of Physics of Thin Films, G. Hass and R. E. Thun, eds. (Academic, 1964), p. 193.
  24. S. L. Chuang, Physics of Opto-Electronic Devices (Wiley, 1995), p. 583.

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