OSA's Digital Library

Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Glenn D. Boreman
  • Vol. 44, Iss. 29 — Oct. 10, 2005
  • pp: 6186–6192

Effect of high-energy electron-beam irradiation on the optical properties of ion-beam-sputtered silicon oxynitride thin films

Shivaprasad Karanth, Ganesh H. Shanbhogue, and C. L. Nagendra  »View Author Affiliations


Applied Optics, Vol. 44, Issue 29, pp. 6186-6192 (2005)
http://dx.doi.org/10.1364/AO.44.006186


View Full Text Article

Enhanced HTML    Acrobat PDF (128 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

Silicon oxynitride thin films are prepared by ion-beam sputtering, and the optical properties and surface chemical composition are studied by spectrophotometric and x-ray photoelectron spectroscopy, respectively. It is seen that the films sputtered by use of nitrogen alone as the sputtering species from a silicon nitride target are completely transparent (k < 0.005) and have a refractive-index dispersion from 1.85 to 1.71 over the visible and near-infrared spectral regions, and the films show distinct spectral lines that are due to silicon, Si(2s), nitrogen, N(1s), and oxygen, O(1s). Sputter deposition of argon and of argon and nitrogen produces silicon-rich silicon oxynitride films that are absorbent and have high refractive indices. These films have a direct electronic transition, with a threshold energy of 1.75 eV. Electron irradiation transforms optically transparent silicon oxynitride films into silicon-rich silicon oxynitride films that have higher refractive indices and are optically absorbing owing to the presence of nonsaturated silicon in the irradiated films. The degradation in current responsivity of silicon photodetectors, under electron irradiation, is within 3% over the wavelength region from 450 to 750 nm, which is entirely due to the degradation of optical properties of silicon oxynitride antireflection coatings.

© 2005 Optical Society of America

OCIS Codes
(040.6040) Detectors : Silicon
(310.1210) Thin films : Antireflection coatings
(310.1860) Thin films : Deposition and fabrication
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Thin Films

History
Original Manuscript: January 3, 2005
Revised Manuscript: May 9, 2005
Manuscript Accepted: May 10, 2005
Published: October 10, 2005

Citation
Shivaprasad Karanth, Ganesh H. Shanbhogue, and C. L. Nagendra, "Effect of high-energy electron-beam irradiation on the optical properties of ion-beam-sputtered silicon oxynitride thin films," Appl. Opt. 44, 6186-6192 (2005)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-44-29-6186


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. H. Kato, N. Kashio, Y. Okhi, K. S. Seol, T. Noma, “Band tail photoluminescence in hydrogenated amorphous silicon oxy-nitride and silicon nitride films,” J. Appl. Phys. 93, 239–244 (2003). [CrossRef]
  2. S. Hasegawa, S. Sakamori, M. Futatsudera, T. Inokuma, Y. Kurata, “Structure of defects in silicon oxy-nitride films,” J. Appl. Phys. 89, 2598–2605 (2001). [CrossRef]
  3. T. S. Eriksson, C. G. Granquist, “Infrared optical properties of silicon oxynitride films: experimental data and theoretical interpretation,” J. Appl. Phys. 60, 2081–2090 (1986). [CrossRef]
  4. R. P. Netterfield, P. J. Martin, W. G. Sainty, “Synthesis of silicon nitride and silicon oxide films by ion-assisted deposition,” Appl. Opt. 25, 3808–3809 (1986). [CrossRef] [PubMed]
  5. B. G. Bovard, J. Ranm, R. Hora, F. Hanselmann, “Silicon nitride thin films by low-voltage ion plating,” Appl. Opt. 28, 4436–4441 (1986). [CrossRef]
  6. K. J. Reeson, P. L. F. Hemment, C. D. Meekison, C. D. Marsh, G. R. Booker, R. J. Chater, J. A. Kilner, J. Davis, “Buried layers of silicon oxy-nitride by ion beam synthesis,” Nucl. Instrum. Methods Phys. Res. B 52, 427–432 (1988). [CrossRef]
  7. M. F. Lambrinos, R. Valzadeh, J. S. Colligon, “Effect of bombardment on optical properties during the deposition of silicon nitride by reactive ion-beam sputtering,” Appl. Opt. 35, 3620–3625 (1996). [CrossRef] [PubMed]
  8. E. Rille, M. Huter, “Optical properties of Si3N4thin films produced by reactive dc-magnetron sputtering,” in Optical Interference Coatings, F. Abeles, ed., Proc. SPIE2253, 1338–1342 (1999). [CrossRef]
  9. R.-Y. Tsai, L.-C. Kuo, F. C. Ho, “Amorphous Si and SiN films preparation by a plasma-enhanced chemical vapor deposition process as optical coating materials,” Appl. Opt. 32, 5561–5566 (1993). [CrossRef] [PubMed]
  10. M. Ida, P. Chaton, B. Rafin, “Control of silicon oxynitrides refractive index by reactive assisted ion beam sputter deposition,” in Optical Interference Coatings, F. Abeles, ed., Proc. SPIE2253, 404–423 (1999). [CrossRef]
  11. Y. Wang, X. Cheng, Z. Lin, C. Zhang, H. Xiao, S. Zou, “A study of silicon oxy-nitride film prepared by ion beam assisted deposition,” Mater. Lett. 58, 2261–2265 (2004). [CrossRef]
  12. H. G. Shanbhogue, C. L. Nagendra, M. N. Annapurna, S. Ajith Kumar, G. K. M. Thutupalli, “Multilayer antireflection coatings for the visible and near-infrared regions,” Appl. Opt. 36, 6339–6351 (1997). [CrossRef]
  13. C. L. Nagendra, G. K. M. Thutupalli, “Optical constants of infrared (IR) materials in the IR region,” J. Spacecraft Technol. 2, 7–17 (1992).
  14. H. Tsubomura, H. Kobayashi, “Solar cells,” Crit. Rev. Solid State Mat. Sci. 18, 261–326 (1991). [CrossRef]
  15. L. D. Partain, Solar Cells and Their Applications (Wiley, 1995), p. 99.
  16. C.-C. Lee, H.-L. Chen, J.-C. Hsu, C.-L. Tien, “Interference coatings based on synthesized silicon nitride,” Appl. Opt. 38, 2078–2081 (1999). [CrossRef]
  17. E. Ritter, Dielectric Materials for Optical Applications, Vol. 8 of Physics of Thin Films, G. Hass, M. H. Francombe, R. W. Hoffman, eds. (Academic, 1975), p. 1.
  18. K. H. Guenther, “Physical and chemical aspects in the application of thin films on optical elements,” Appl. Opt. 23, 3612–3632 (1984). [CrossRef] [PubMed]
  19. J. Kanicki, W. L. Warren, C. H. Seager, M. S. Crowder, P. M. Lenahan, “Microscopic origin of the light-induced defects in hydrogenated nitrogen rich amorphous silicon nitride films,” J. Noncryst. Solids 137 & 138, 291–294 (1991). [CrossRef]
  20. J. L. Bischoff, F. Lutz, L. Kubler, D. Bolomont, “Heterogeneous Si3N4 growth during SiNx film deposition and thermal nitridation of Si(100): an x-ray photoemission spectroscopy study,” Thin Solid Films 187, 101–109 (1990). [CrossRef]
  21. S. Hasegawa, T. Tsukao, P. C. Zalm, “Bonding and electronic structures of amorphous SiNx:H,” J. Appl. Phys. 61, 2916–2920 (1987). [CrossRef]
  22. D. Briggs, M. P. Seah, eds., Practical Surface Analysis of Auger and X-Ray Photoelectron Spectroscopy (Wiley, 1983).
  23. O. S. Heavens, Measurement of Optical Constants of Thin Films, Vol. 2 of Physics of Thin Films, G. Hass, R. E. Thun, eds. (Academic, 1964), p. 193.
  24. S. L. Chuang, Physics of Opto-Electronic Devices (Wiley, 1995), p. 583.

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited