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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Glenn D. Boreman
  • Vol. 44, Iss. 33 — Nov. 20, 2005
  • pp: 7191–7195

Multilayer silicon cavity mirrors for the far-infrared p-Ge laser

Todd W. Du Bosq, Andrey V. Muravjov, Robert E. Peale, and Christopher J. Fredricksen  »View Author Affiliations


Applied Optics, Vol. 44, Issue 33, pp. 7191-7195 (2005)
http://dx.doi.org/10.1364/AO.44.007191


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Abstract

Multilayer mirrors capable of >99.9% reflectivity in the far infrared (70−200 µm wavelengths) were constructed using thin silicon etalons separated by empty gaps. Calculations indicate that only three periods are required to produce 99.9% reflectivity because of the large difference between the index of refraction of silicon (3.384) and the vacuum (1). The mirror was assembled from high-purity silicon wafers, with resistivity over 4000 Omega cm to reduce free-carrier absorption. Wafers were double-side polished with faces parallel within 10 arc sec. The multilayer mirror was demonstrated as a cavity mirror for the far-infrared p-Ge laser. Dependence of reflectivity on design accuracy was considered.

© 2005 Optical Society of America

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.1480) Optical devices : Bragg reflectors
(230.4170) Optical devices : Multilayers
(260.3090) Physical optics : Infrared, far

ToC Category:
Optical Devices

Citation
Todd W. Du Bosq, Andrey V. Muravjov, Robert E. Peale, and Christopher J. Fredricksen, "Multilayer silicon cavity mirrors for the far-infrared p-Ge laser," Appl. Opt. 44, 7191-7195 (2005)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-44-33-7191


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References

  1. T. W. Du Bosq, E. W. Nelson, A. V. Muravjov, D. A. Walters, G. Subramanian, K. B. Sundaram, R. E. Peale, N. Tache, D. B. Tanner, and C. J. Fredricksen, "Etalon, lamellar, and Bragg intracavity wavelength selecting mirrors for the far-infrared p-Ge laser," presented at Optics in the Southeast 2003, Orlando, Florida, 12-13 November 2003.
  2. T. W. Du Bosq, A. V. Muravjov, and R. E. Peale, "High reflectivity intracavity Bragg mirrors for the far-infrared p-Ge laser," in Terahertz for Military and Security Applications II, M. Novak, ed., Proc. SPIE 5411, 167-173 (2004). [CrossRef]
  3. E. W. Nelson, S. H. Withers, A. V. Muravjov, R. C. Strijbos, R. E. Peale, S. G. Pavlov, V. N. Shastin, and C. J. Fredricksen, "High resolution study of composite cavity effects for p-Ge lasers," IEEE J. Quantum Electron. 37, 1525-1530 (2001). [CrossRef]
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  7. J. A. Dobrowolski, "Optical properties of films and coatings," in Handbook of Optics Fundamentals, Techniques, & Design,M. Bass, ed. (McGraw-Hill, 1995), Vol. 1, pp. 42.10-42.11.
  8. E. W. Loewenstein, D. R. Smith, and R. L. Morgan, "Optical constants of far infrared materials. 2: Crystalline solids," Appl. Opt. 12, 398-406 (1973).
  9. T. W. Du Bosq, R. E. Peale, A. V. Muravjov, and C. J. Fredricksen, "Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon," in Solid State Lasers XII, R. Scheps, ed., Proc. SPIE 4968, 119-125 (2003). [CrossRef]
  10. T. W. Du Bosq, R. E. Peale, E. W. Nelson, A. V. Muravjov, C. J. Fredricksen, N. Tache, and D. B. Tanner, "Dielectric selective mirror for intracavity wavelength selection in far-infrared p-Ge lasers," J. Appl. Phys. 94, 5474-5478 (2003). [CrossRef]
  11. T. W. Du Bosq, R. E. Peale, E. W. Nelson, A. V. Muravjov, D. A. Walters, G. Subramanian, K. B. Sundaram, and C. J. Fredricksen, "Wavelength selection for the far-infrared p-Ge laser using etched silicon lamellar gratings," Opt. Laser Technol. 37, 87-91 (2004). [CrossRef]

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