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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Glenn D. Boreman
  • Vol. 44, Iss. 33 — Nov. 20, 2005
  • pp: 7191–7195

Multilayer silicon cavity mirrors for the far-infrared p-Ge laser

Todd W. Du Bosq, Andrey V. Muravjov, Robert E. Peale, and Christopher J. Fredricksen  »View Author Affiliations


Applied Optics, Vol. 44, Issue 33, pp. 7191-7195 (2005)
http://dx.doi.org/10.1364/AO.44.007191


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Abstract

Multilayer mirrors capable of >99.9% reflectivity in the far infrared (70–200 µm wavelengths) were constructed using thin silicon etalons separated by empty gaps. Calculations indicate that only three periods are required to produce 99.9% reflectivity because of the large difference between the index of refraction of silicon (3.384) and the vacuum (1). The mirror was assembled from high-purity silicon wafers, with resistivity over 4000 Ω cm to reduce free-carrier absorption. Wafers were double-side polished with faces parallel within 10 arc sec. The multilayer mirror was demonstrated as a cavity mirror for the far-infrared p-Ge laser. Dependence of reflectivity on design accuracy was considered.

© 2005 Optical Society of America

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.1480) Optical devices : Bragg reflectors
(230.4170) Optical devices : Multilayers
(260.3090) Physical optics : Infrared, far

ToC Category:
Optical Devices

History
Original Manuscript: March 29, 2005
Manuscript Accepted: July 28, 2005
Published: November 20, 2005

Citation
Todd W. Du Bosq, Andrey V. Muravjov, Robert E. Peale, and Christopher J. Fredricksen, "Multilayer silicon cavity mirrors for the far-infrared p-Ge laser," Appl. Opt. 44, 7191-7195 (2005)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-44-33-7191

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